Tribological characterisation of electrodeposited nickel–titania nanocomposite coatings sliding against silicon nitride in high vacuum

Oxygen K-edge X-ray absorption spectroscopy is used routinely to study a range of solid materials. However, liquid samples are studied less frequently at the oxygen K-edge due to the combined challenges of high-vacuum conditions and oxygen contamination of window materials. A modular sample holder design with a twist-seal sample containment system that provides a simple method to encapsulate liquid samples under high-vacuum conditions is presented. This work shows that pure silicon nitride windows have lower oxygen contamination than both diamond- and silicon-rich nitride windows, that the levels of oxygen contamination are related to the age of the windows, and provides a protocol for minimizing the background oxygen contamination. Acid-washed 100 nm-thick silicon nitride windows were found to give good quality oxygen K-edge data on dilute liquid samples.

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Electrodeposited nickel–graphene nanocomposite coating: effect of graphene nanoplatelet size on its microstructure and hardness

RSC Advances ◽

10.1039/d0ra03776a ◽

2020 ◽

Vol 10 (37) ◽

pp. 22080-22090 ◽

Cited By ~ 1

Author(s):

Tran Van Hau ◽

Pham Van Trinh ◽

Nguyen Phuong Hoai Nam ◽

Nguyen Van Tu ◽

Vu Dinh Lam ◽

...

Keyword(s):

Nanocomposite Coating ◽

Nanocomposite Coatings ◽

Graphene Nanoplatelet ◽

Electrodeposited Nickel ◽

Graphene Nanocomposite

The effect of graphene nanoplatelet size on the microstructure and hardness of electrodeposited nickel–graphene nanocomposite coatings was investigated.

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Anticorrosive Epoxy Nanocomposite Coatings Filled with Polyaniline-Functionalized Silicon Nitride Particles

Industrial & Engineering Chemistry Research ◽

10.1021/acs.iecr.0c02460 ◽

2020 ◽

Vol 59 (38) ◽

pp. 16649-16659

Author(s):

Hongfen Wang ◽

Qi Qi ◽

Yongxing Zhang ◽

Shougang Chen ◽

Binbin Dong ◽

...

Keyword(s):

Silicon Nitride ◽

Nanocomposite Coatings ◽

Epoxy Nanocomposite

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Optical Properties of Aluminum- and Silicon-Nitride Films and Al–Si–N Nanocomposite Coatings Deposited by Reactive Magnetron Sputtering

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques ◽

10.1134/s1027451021010274 ◽

2021 ◽

Vol 15 (1) ◽

pp. 139-146

Author(s):

F. V. Konusov ◽

S. K. Pavlov ◽

A. L. Lauk ◽

A. V. Kabyshev ◽

R. M. Gadirov

Keyword(s):

Optical Properties ◽

Silicon Nitride ◽

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Nanocomposite Coatings ◽

Reactive Magnetron ◽

Silicon Nitride Films

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Ultra-high vacuum deposition and characterization of silicon nitride thin films

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3675835 ◽

2012 ◽

Vol 30 (2) ◽

pp. 02B129 ◽

Cited By ~ 9

Author(s):

D. S. Katzer ◽

D. J. Meyer ◽

D. F. Storm ◽

J. A. Mittereder ◽

V. M. Bermudez ◽

...

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

High Vacuum ◽

Ultra High Vacuum ◽

Vacuum Deposition

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Interface State Densities for SiNx: H on Cleaved GaAs and InP(110)

MRS Proceedings ◽

10.1557/proc-573-253 ◽

1999 ◽

Vol 573 ◽

Author(s):

D. Landheer ◽

J. E. Hulse ◽

K. Rajesh

Keyword(s):

Silicon Nitride ◽

Electron Cyclotron Resonance ◽

High Vacuum ◽

Chemical Vapour ◽

Low Frequency ◽

Processing System ◽

Interface State ◽

Ultra High Vacuum ◽

Interface Control ◽

State Densities

ABSTRACTSilicon nitride was deposited in-situ by electron-cyclotron resonance plasma chemical-vapour deposition (ECR-CVD) on (110) surfaces formed by cleaving GaAs and InP(100) substrates in an ultra-high vacuum processing system. Capacitors formed by depositing Al gates on the facet surfaces were analyzed by the high-low frequency capacitance-voltage (CV) technique. The minimum interface-state densities obtained for the cleaved GaAs (110) surfaces were 1–2 × 1012 eV−1cm−2. For cleaved InP facets the measured minimum interface state densities were a factor of two higher; however, they exhibited a smaller hysteresis in the CV characteristics and a smaller modulation in the surface potential. The interface state densities did not change significantly for the GaAs(110) facets if a Si interface control layer 0.8–2 nm thick was deposited prior to silicon nitride deposition; however, a larger effect was observed for the hysteresis and flatband voltage shift of the CV characteristics. The effect of annealing on the interfaces with Si was investigated and the performance compared with published results for GaAs(100) surfaces prepared by molecular-beam epitaxy.

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