scholarly journals Oxidation kinetics of hot-pressed silicon carbide

1976 ◽  
Vol 11 (11) ◽  
pp. 2175-2175
Author(s):  
S. C. Singhal
Keyword(s):  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Kinetics Of

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

Oxidation kinetics of silicon carbide in steam at temperature range of 1400 to 1800 °C studied by laser heating

2020 ◽  
Vol 529 ◽  
pp. 151939 ◽  
Author(s):  
Hai Vu Pham ◽  
Yuji Nagae ◽  
Masaki Kurata ◽  
David Bottomley ◽  
Kenichiro Furumoto
Keyword(s):  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Laser Heating ◽  
Temperature Range ◽  
Kinetics Of

Passive-Oxidation Kinetics of High-Purity Silicon Carbide from 800o to 1100oC

1996 ◽  
Vol 79 (11) ◽  
pp. 2897-2911 ◽  
Author(s):  
C. Eric Ramberg ◽  
Gary Cruciani ◽  
Karl E. Spear ◽  
Richard E. Tressler ◽  
Charles F. Ramberg
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Oxidation Kinetics ◽  
Passive Oxidation ◽  
High Purity Silicon ◽  
Kinetics Of

scholarly journals Oxidation kinetics of single crystal silicon carbide using electron microscopy

2012 ◽  
Vol 120 (1401) ◽  
pp. 181-185 ◽  
Author(s):  
Bralee CHAYASOMBAT ◽  
Takeharu KATO ◽  
Tsukasa HIRAYAMA ◽  
Tomoharu TOKUNAGA ◽  
Katsuhiro SASAKI ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Oxidation Kinetics ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Kinetics Of
Sign in / Sign up

Export Citation Format

Share Document