Investigation of electronic properties of graphene/Si field-effect transistor

Nanoscale Research Letters ◽

10.1186/1556-276x-7-677 ◽

2012 ◽

Vol 7 (1) ◽

Author(s):

Xiying Ma ◽

Weixia Gu ◽

Jiaoyan Shen ◽

Yunhai Tang

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Investigating modification on electronic properties of bilayer MoS2 field-effect transistor by low-temperature oxygen plasma treatment

Applied Surface Science ◽

10.1016/j.apsusc.2019.07.228 ◽

2019 ◽

Vol 495 ◽

pp. 143486 ◽

Author(s):

Jiangtao Wang ◽

Jinyao Dong ◽

Yao Xue ◽

Xiaohong Yan ◽

Quan Wang

Keyword(s):

Low Temperature ◽

Plasma Treatment ◽

Electronic Properties ◽

Field Effect ◽

Oxygen Plasma ◽

Field Effect Transistor ◽

Oxygen Plasma Treatment ◽

Effect Transistor

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Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

Applied Physics Letters ◽

10.1063/1.110532 ◽

1993 ◽

Vol 63 (16) ◽

pp. 2219-2221 ◽

Author(s):

J. H. Burroughes ◽

M. L. Leadbeater ◽

M. P. Grimshaw ◽

R. J. Evans ◽

D. A. Ritchie ◽

...

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

One Dimensional ◽

Molecular Beam Epitaxial ◽

Epitaxial Regrowth ◽

Effect Transistor

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Quantitative analysis of nanoscale electronic properties in an Al[sub x]Ga[sub 1−x]N/GaN heterostructure field-effect transistor structure

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1385914 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1671 ◽

Author(s):

D. M. Schaadt ◽

E. J. Miller ◽

E. T. Yu ◽

J. M. Redwing

Keyword(s):

Quantitative Analysis ◽

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Gan Heterostructure

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Field-Effect Transistor Based on MoSi₂N₄ and WSi₂N₄ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3138377 ◽

2022 ◽

pp. 1-7

Author(s):

Nayereh Ghobadi ◽

Manouchehr Hosseini ◽

Shoeib Babaee Touski

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Computational Study ◽

Biaxial Strain ◽

Effect Transistor

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Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study

Physical Review B ◽

10.1103/physrevb.79.085402 ◽

2009 ◽

Vol 79 (8) ◽

Author(s):

Kazuyuki Uchida ◽

Susumu Okada

Keyword(s):

Carbon Nanotube ◽

Electronic Properties ◽

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

First Principles Study ◽

Effect Transistor

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Electronic properties of a metallic nanoparticle coupled to a graphene nanoribbon: A single-electron field effect transistor

Applied Physics Letters ◽

10.1063/1.3089819 ◽

2009 ◽

Vol 94 (8) ◽

pp. 082108 ◽

Author(s):

M. Mizuno ◽

Eugene H. Kim

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Graphene Nanoribbon ◽

Single Electron ◽

Metallic Nanoparticle ◽

Electron Field ◽

Effect Transistor

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Electronic properties of DNA-surfactant complex and its application to DNA-based bio-organic field effect transistor memory

10.1117/12.932267 ◽

2012 ◽

Author(s):

Lijuan Liang ◽

Tomoyoshi Yukimoto ◽

Sei Uemura ◽

Toshihide Kamata ◽

Kazuki Nakamura ◽

...

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Organic Field Effect Transistor ◽

Surfactant Complex ◽

Effect Transistor

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Tuning electronic properties of FeSe0.5Te0.5 thin flakes using a solid ion conductor field-effect transistor

Physical Review B ◽

10.1103/physrevb.95.174513 ◽

2017 ◽

Vol 95 (17) ◽

Author(s):

C. S. Zhu ◽

J. H. Cui ◽

B. Lei ◽

N. Z. Wang ◽

C. Shang ◽

...

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Ion Conductor ◽

Effect Transistor

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Investigation of strain-induced modulation on electronic properties of graphene field effect transistor

Physics Letters A ◽

10.1016/j.physleta.2016.11.003 ◽

2017 ◽

Vol 381 (4) ◽

pp. 292-297 ◽

Author(s):

Jinyao Dong ◽

Shuai Liu ◽

Yongzhong Fu ◽

Quan Wang

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Graphene Field Effect Transistor ◽

Effect Transistor

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Strain-induced modulation on phonon and electronic properties of suspended black phosphorus field effect transistor

Physics Letters A ◽

10.1016/j.physleta.2016.12.046 ◽

2017 ◽

Vol 381 (8) ◽

pp. 792-795 ◽

Author(s):

Bo Zheng ◽

Naichao Si ◽

Guoxin Xie ◽

Quan Wang

Keyword(s):

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Black Phosphorus ◽

Effect Transistor

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