scholarly journals Field-Effect Transistor Based on MoSi₂N₄ and WSi₂N₄ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties

Author(s):  
Nayereh Ghobadi ◽  
Manouchehr Hosseini ◽  
Shoeib Babaee Touski
2019 ◽  
Vol 48 (11) ◽  
pp. 7048-7054 ◽  
Author(s):  
Seyyedeh Hoda Tahaei ◽  
Seyed Saleh Ghoreishi ◽  
Reza Yousefi ◽  
Habib Aderang

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  

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