Field-Effect Transistor Based on MoSi₂N₄ and WSi₂N₄ Monolayers Under Biaxial Strain: A Computational Study of the Electronic Properties
Nayereh Ghobadi
◽
Manouchehr Hosseini
◽
Shoeib Babaee Touski
Ashok Srivastava
◽
Md. S. Fahad
◽
Ashwani K. Sharma
◽
Clay Mayberry
2019 ◽
Vol 48
(11)
◽
pp. 7048-7054
◽
Seyyedeh Hoda Tahaei
◽
Seyed Saleh Ghoreishi
◽
Reza Yousefi
◽
Habib Aderang
2020 ◽
Vol 36
(1)
◽
pp. 015012
Muntasir Mahdi
◽
Md Anik Hossain
◽
Sazzad Hussain
◽
Mehedi Hasan
◽
Hasan U Zaman
◽
...
2019 ◽
Vol 495
◽
pp. 143486
◽
Jiangtao Wang
◽
Jinyao Dong
◽
Yao Xue
◽
Xiaohong Yan
◽
Quan Wang
Xiying Ma
◽
Weixia Gu
◽
Jiaoyan Shen
◽
Yunhai Tang
1993 ◽
Vol 63
(16)
◽
pp. 2219-2221
◽
J. H. Burroughes
◽
M. L. Leadbeater
◽
M. P. Grimshaw
◽
R. J. Evans
◽
D. A. Ritchie
◽
...
2001 ◽
Vol 19
(4)
◽
pp. 1671
◽
D. M. Schaadt
◽
E. J. Miller
◽
E. T. Yu
◽
J. M. Redwing
Kazuyuki Uchida
◽
Susumu Okada
2009 ◽
Vol 94
(8)
◽
pp. 082108
◽
M. Mizuno
◽
Eugene H. Kim
Lijuan Liang
◽
Tomoyoshi Yukimoto
◽
Sei Uemura
◽
Toshihide Kamata
◽
Kazuki Nakamura
◽
...