Quantitative analysis of nanoscale electronic properties in an Al[sub x]Ga[sub 1−x]N/GaN heterostructure field-effect transistor structure

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1385914 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1671 ◽

Author(s):

D. M. Schaadt ◽

E. J. Miller ◽

E. T. Yu ◽

J. M. Redwing

Keyword(s):

Quantitative Analysis ◽

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Gan Heterostructure

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Scanning capacitance spectroscopy of an Al[sub x]Ga[sub 1−x]N/GaN heterostructure field-effect transistor structure: Analysis of probe tip effects

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491536 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1671 ◽

Author(s):

D. M. Schaadt ◽

E. T. Yu

Keyword(s):

Structure Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Capacitance Spectroscopy ◽

Gan Heterostructure

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Electronic properties of a carbon nanotube in a field-effect transistor structure: A first-principles study

Physical Review B ◽

10.1103/physrevb.79.085402 ◽

2009 ◽

Vol 79 (8) ◽

Author(s):

Kazuyuki Uchida ◽

Susumu Okada

Keyword(s):

Carbon Nanotube ◽

Electronic Properties ◽

First Principles ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

First Principles Study ◽

Effect Transistor

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Electronic properties of gallium-arsenide field-effect-transistor structure used as detector for acoustic surface waves

Electronics Letters ◽

10.1049/el:19720156 ◽

1972 ◽

Vol 8 (8) ◽

pp. 215 ◽

Author(s):

M. Bruun

Keyword(s):

Gallium Arsenide ◽

Surface Waves ◽

Electronic Properties ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Acoustic Surface Waves ◽

Effect Transistor

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Mechanism of AlGaN/GaN Heterostructure Field-Effect Transistor Threshold Voltage Shift by Illumination

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2103 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2103-2107 ◽

Author(s):

Masaya Okada ◽

Hideki Ito ◽

Jin-Ping Ao ◽

Yasuo Ohno

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor ◽

Gan Heterostructure

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal of Applied Physics ◽

10.1063/1.4936780 ◽

2015 ◽

Vol 118 (21) ◽

pp. 215701 ◽

Author(s):

Alexander Pooth ◽

Michael J. Uren ◽

Markus Cäsar ◽

Trevor Martin ◽

Martin Kuball

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Charge Movement ◽

Substrate Bias ◽

Transistor Structure ◽

Hetero Structure ◽

Carbon Doped ◽

Effect Transistor

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Deterministic chaos oscillator based on a bipolar and field-effect transistor structure with negative resistance

2016 Dynamics of Systems, Mechanisms and Machines (Dynamics) ◽

10.1109/dynamics.2016.7819081 ◽

2016 ◽

Author(s):

Andriy Semenov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Deterministic Chaos ◽

Negative Resistance ◽

Transistor Structure ◽

Effect Transistor

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Improvement of AlGaN/GaN Heterostructure Field Effect Transistor Characteristics by Using Two-Step Ohmic Contact Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2309 ◽

2003 ◽

Vol 42 (Part 1, No. 4B) ◽

pp. 2309-2312 ◽

Author(s):

Dong-Hyun Cho ◽

Mitsuaki Shimizu ◽

Toshihide Ide ◽

Byoungrho Shim ◽

Hajime Okumura

Keyword(s):

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistor ◽

Contact Process ◽

Effect Transistor ◽

Gan Heterostructure

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Structural, morphological, and defect properties of metamorphic In0.7Ga0.3As/GaAs0.35Sb0.65 p-type tunnel field effect transistor structure grown by molecular beam epitaxy

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4812793 ◽

2013 ◽

Vol 31 (4) ◽

pp. 041203 ◽

Author(s):

Yan Zhu ◽

Mantu K. Hudait ◽

Dheeraj K. Mohata ◽

Bijesh Rajamohanan ◽

Suman Datta ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Transistor Structure ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

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Performance Analysis of AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)

Advanced VLSI Design and Testability Issues ◽

10.1201/9781003083436-12 ◽

2020 ◽

pp. 215-223

Author(s):

Yogesh Kumar Verma ◽

Santosh Kumar Gupta

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Gan Heterostructure

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Gate leakage reduction through the use of a gate-to-source/drain non-overlapped metal–oxide–semiconductor field-effect transistor structure

Proceedings of the Institution of Mechanical Engineers Part N Journal of Nanoengineering and Nanosystems ◽

10.1177/1740349911404304 ◽

2010 ◽

Vol 224 (4) ◽

pp. 173-181 ◽

Author(s):

A K Rana ◽

N Chand ◽

V Kapoor

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage ◽

Transistor Structure ◽

Leakage Reduction ◽

Effect Transistor

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