Si nanopatterning by reactive ion etching through an on-chip self-assembled porous anodic alumina mask

In this research, a polydimethylsiloxane nanostamp for nanocontact printing was fabricated by replicating Si nanomoulds. Si moulds of various shapes and sizes were fabricated by interference lithography and deep reactive ion etching. As an anti-adhesion layer, octadecyltrichlorosilane was treated on Si nanomoulds. Further, superhydrophobic surfaces were obtained by self-assembled monolayer treatment on Si nanostructures.

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Large Scale Engineered Nanostructured Surfaces by Reactive Ion Etching with Kinetically Self-Assembled Non-continuous Metal Film as Etching Mask

MRS Proceedings ◽

10.1557/proc-849-kk8.6 ◽

2004 ◽

Vol 849 ◽

Cited By ~ 1

Author(s):

Wei Wei ◽

Mark Bachman ◽

Guann-Pyng Li

Keyword(s):

Silicon Dioxide ◽

Metal Film ◽

Large Scale ◽

Reactive Ion Etching ◽

Etching Technique ◽

Ion Etching ◽

Structured Surfaces ◽

Self Assembled ◽

Metal Islands ◽

Continuous Metal

ABSTRACTIn this study, we explored the possibility of using annealed non-continuous metal film enabled etching technique to produce large nano-structured surfaces. Non-continuous Ag film is deposited on silicon wafer with a thin layer of silicon dioxide using E-beam deposition, and then vacuum thermal annealing was applied on the deposited films, causing nano-scaled Ag particles to migrate and agglomerate into self-assembled islands of larger nanometer dimensions. We controlled the density and average size of the metal islands through thickness of the initial film and subsequent annealing rates. Reactive ion etching through the metal islands mask into the underneath silicon dioxide layer was performed following the annealing process. Preliminary hydrophobicity experiments were carried out using the engineered nano-structured surfaces.

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Self-assembled Ni nanodot on SiO 2 film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

10.1117/12.663339 ◽

2006 ◽

Author(s):

Huang-Shen Lin ◽

Chih-Chiang Kao ◽

Hao-Chung Kuo ◽

Shing-Chung Wang ◽

Gong-Ru Lin

Keyword(s):

Reactive Ion Etching ◽

Si Substrate ◽

Ion Etching ◽

Etching Mask ◽

Self Assembled

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Silicon CMOS BEOL Compatible Optical Waveguide Micro-mirrors

MRS Proceedings ◽

10.1557/proc-744-m8.17 ◽

2002 ◽

Vol 744 ◽

Author(s):

Shom Ponoth ◽

Navnit Agarwal ◽

Peter Persans ◽

Joel Plawsky

Keyword(s):

Refractive Index ◽

Optical Waveguides ◽

Silicon Oxide ◽

Reactive Ion Etching ◽

Plasma Chemistry ◽

Planar Waveguides ◽

Ion Etching ◽

Polymer Waveguide ◽

Sidewall Angle ◽

On Chip

ABSTRACTOptical waveguides are being explored for on-chip purposes to overcome the speed limitations of electrical interconnects. Passive optical components like waveguides and vertical outcouplers are important components in such schemes. In this study we fabricate planar waveguides with integrated vertical micro-mirrors using standard Back End of the Line silicon (BEOL) CMOS based processes. Around 1.6 μm of a hybrid alkoxy siloxane polymer with a refractive index of ∼ 1.50 at the intended wavelength of 830 nm is used as the core and plasma deposited silicon oxide with a refractive index of ∼ 1.46 is used as the cladding. The angular face in the polymer waveguide that would function as the mirror surface was fabricated by a pattern transfer method which involves transferring the angle in a template to the waveguide using anisotropic reactive ion etching. The sidewall angle realized in a positive resist on patterning was used as the angle template. Exposure and development conditions were adjusted for Shipley® S1813 photoresist to generate a sidewall angle of ∼ 65°. The anisotropic Reactive Ion Etching (RIE) was done using a CF4/O2 plasma chemistry. A gas composition of 50/50 CF4/O2 was chosen in order to minimize the etch related roughness of the polymer and the photoresist. The metallization of the mirror faces was done using a self-aligned maskless technique which ensures metal deposition only on the angular face and also eliminates a lithography step.

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