Strained SiGe layer grown on microring-patterned substrate for silicon-based light-emitting devices

Author(s):  
Yi Li ◽  
Xingzhi Qiu ◽  
Chengcong Cui ◽  
Jinwen Song ◽  
Qingzhong Huang ◽  
...  
2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  

Nature ◽  
1996 ◽  
Vol 384 (6607) ◽  
pp. 338-341 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

Vacuum ◽  
2005 ◽  
Vol 78 (2-4) ◽  
pp. 551-556 ◽  
Author(s):  
M.A. Lourenço ◽  
M. Milosavljevic ◽  
S. Galata ◽  
M.S.A. Siddiqui ◽  
G. Shao ◽  
...  

2012 ◽  
Vol 18 (6) ◽  
pp. 1830-1838 ◽  
Author(s):  
Xuejun Xu ◽  
S. Narusawa ◽  
T. Chiba ◽  
T. Tsuboi ◽  
Jinsong Xia ◽  
...  

2017 ◽  
Vol 122 (16) ◽  
pp. 163106 ◽  
Author(s):  
Jinxin Chen ◽  
Zhifei Gao ◽  
Miaomiao Jiang ◽  
Yuhan Gao ◽  
Xiangyang Ma ◽  
...  

1992 ◽  
Vol 262 ◽  
Author(s):  
M. S. Brandt ◽  
H. D. Fuchs ◽  
A. Höpner ◽  
M. Rosenbauer ◽  
M. Stutzmann ◽  
...  

ABSTRACTThe discovery of strong visible photoluminescence at room temperature from porous silicon has triggered new hope that light-emitting devices compatible with existing Si-technology might become possible. We first review the luminescence behavior observed in silicon-based materials such as amorphous Si, microcrystalline Si, or SiO2. We then critically discuss the present model for the luminescence from porous silicon based on quantum confinement in view of the growing experimental evidence for the importance of both hydrogen and oxygen to obtain efficient luminescence from this material. We propose an alternative explanation based on the presence of siloxene (SieO3H6) in porous silicon which is corroborated by experimental results obtained with photoluminescence, Raman and IR spectroscopy. An important aspect is that siloxene can be prepared by methods different from anodic oxidation, and one particular technique will be described together with possible ways to tune the luminescence energy.


2008 ◽  
Vol 104 (6) ◽  
pp. 063103 ◽  
Author(s):  
S. Prezioso ◽  
A. Anopchenko ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
G. Pucker ◽  
...  

1996 ◽  
Vol 452 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet

AbstractSilicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (EL) with a spectral peak between 1.75 and 1.90e. The LEDs are connected in a common-emitter configuration to integrated vertical pnp bipolar driver transistors. This is the first demonstration of an all-silicon visible light emitter / bipolar transistor optoelectronic integrated circuit. The LED device fabrication, process integration, and optoelectronic device characteristics are discussed.


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