Integrating Bipolar Junction Transistors with Silicon-Based Light-Emitting Devices

1996 ◽  
Vol 452 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Visible Light ◽  
Integrated Circuit ◽  
Silicon Oxide ◽  
Process Integration ◽  
Optoelectronic Device ◽  
Device Fabrication ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Integrated Circuit Manufacturing ◽  
Silicon Based

AbstractSilicon-based optoelectronic devices enable the realization of optoelectronic systems that are compatible with integrated circuit manufacturing technology. This work reports on silicon-based visible light-emitting devices (LEDs) that have been successfully integrated into a standard bipolar fabrication sequence. The basic LED structure consists of a 0.5–1.0μm thick silicon-rich silicon oxide (SRSO) active light-emitting layer formed on a p-type silicon wafer by partial oxidation of porous silicon (PSi), with an n+ doped polysilicon cathode. The LEDs exhibit bright electroluminescence (EL) with a spectral peak between 1.75 and 1.90e. The LEDs are connected in a common-emitter configuration to integrated vertical pnp bipolar driver transistors. This is the first demonstration of an all-silicon visible light emitter / bipolar transistor optoelectronic integrated circuit. The LED device fabrication, process integration, and optoelectronic device characteristics are discussed.

Silicon-based visible light-emitting devices integrated into microelectronic circuits

Nature ◽  
1996 ◽  
Vol 384 (6607) ◽  
pp. 338-341 ◽  
Author(s):  
K. D. Hirschman ◽  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Visible Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Silicon Based

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

Ge/Si self-assembled islands integrated in 2D photonic crystals microcavities for realisation of silicon-based light-emitting devices

2004 ◽  
Author(s):  
Sylvain David ◽  
Moustapha El Kurdi ◽  
Philippe Boucaud ◽  
Cecile Kammerer ◽  
Xiang Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Self Assembled ◽  
Silicon Based

Self-Aligned Contacting Processes for the 80 nm p-MTJ Device Fabrication by Wet Approach

2018 ◽  
Vol 282 ◽  
pp. 152-157 ◽  
Author(s):  
Hu Shan Cui ◽  
Kai Hua Cao ◽  
You Guang Zhang ◽  
Hua Gang Xiong ◽  
Jia Qi Wei ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnesium Oxide ◽  
Building Block ◽  
Silicon Oxide ◽  
Process Integration ◽  
Electrical Contact ◽  
Device Fabrication ◽  
Integration Scheme ◽  
Ferromagnetic Metals ◽  
Wet Etch

In this work, a novel process integration scheme for p-MTJ devices’ passivation and contacting was proposed. The method can efficiently protect the ferromagnetic metals and the magnesium oxide which are the key building block of p-MTJs, and effectively make electrical contact with the interconnect metals for p-MTJs. The scheme consists of passivation of p-MTJs with dual dielectrics - silicon nitride and silicon oxide, followed by planarization and selective wet etch. The proposed integration scheme was successfully demonstrated with 80 nm size p-MTJ devices.

GaAsP pn Diode on Si Substrate Grown by Metalorganic Molecular Beam Epitaxy for Visible Light-Emitting Devices

2001 ◽  
Vol 40 (Part 1, No. 6A) ◽  
pp. 3953-3959 ◽  
Author(s):  
Masahiro Yoshimoto ◽  
Mitsunari Itoh ◽  
Junji Saraie ◽  
Toshiyuki Yasui ◽  
Sanghoon Ha ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Molecular Beam ◽  
Si Substrate ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Metalorganic Molecular Beam Epitaxy

Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates

2004 ◽  
Vol 241 (3) ◽  
pp. 747-750 ◽  
Author(s):  
Yasushi Takashima ◽  
Ichirou Nomura ◽  
Yuki Nakai ◽  
Akihiko Kikuchi ◽  
Katsumi Kishino
Keyword(s):  
Visible Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Middle Range ◽  
Inp Substrates

Hybrid interfaces of conjugate polymers: Band edge alignment studied by ultraviolet photoelectron spectroscopy

2004 ◽  
Vol 19 (7) ◽  
pp. 1917-1923 ◽  
Author(s):  
W.R. Salaneck ◽  
M. Fahlman
Keyword(s):  
Electronic Structure ◽  
Polymer Films ◽  
Photoelectron Spectroscopy ◽  
Inert Atmosphere ◽  
Device Fabrication ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Hybrid Interface

The control of hybrid interfaces in polymer-based electronic devices may be enabling in many applications. The engineering of hybrid interface involves (requires) an understanding of the electronic structure of materials—one organic and one inorganic—that form the two halves of hybrid interfaces, as well as the electronic and chemical consequences of the coupling of the two. Although much literature exists describing the interfaces between vapor-deposited organic molecules and model molecules for polymers on the surfaces of clean metals in ultrahigh vacuum, few studies have been reported on spin-coated, semiconducting polymer films on realistic substrates. Spin coating in an inert atmosphere (or even air) is a central part of the process of the fabrication of polymer-based light-emitting devices and other modern polymer-based electronic components. Here, work on the electronic structure of semiconducting (conjugated) polymer films spin-coated onto selected inorganic substrates, carried out using ultraviolet photoelectron spectroscopy, is reviewed and summarized to generate a generalized picture of the hybrid interfaces formed under realistic device fabrication conditions.

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