TEM and X-Ray Analysis of (AlyGa1-y)xIn1-xP Quantum Well Layers Under Compressive and Tensile Strains

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Download Full-text

X-ray diffraction in quantum-well structures

Physica B Condensed Matter ◽

10.1016/0921-4526(95)00969-8 ◽

1996 ◽

Vol 221 (1-4) ◽

pp. 487-493 ◽

Cited By ~ 15

Author(s):

E. Zolotoyabko ◽

Y. Finkelstein ◽

M. Blumina ◽

D. Fekete

Keyword(s):

Quantum Well ◽

X Ray Diffraction ◽

Quantum Well Structures ◽

X Ray

Download Full-text

Quantitative analysis of the compositional profile of a single quantum well by grazing incidence x-ray reflectivity and photoluminescence

Applied Physics Letters ◽

10.1063/1.123784 ◽

1999 ◽

Vol 74 (15) ◽

pp. 2152-2154 ◽

Cited By ~ 2

Author(s):

Youngboo Moon ◽

Euijoon Yoon

Keyword(s):

Quantitative Analysis ◽

Quantum Well ◽

Grazing Incidence ◽

Single Quantum ◽

Single Quantum Well ◽

Compositional Profile ◽

X Ray

Download Full-text

Determination of composition distributions in InP/InGaAs/InP quantum-well structures by X-ray crystal truncation rod scattering and quantum levels

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00476-4 ◽

1998 ◽

Vol 186 (1-2) ◽

pp. 48-54 ◽

Cited By ~ 20

Author(s):

M Tabuchi ◽

K Fujibayashi ◽

N Yamada ◽

K Hagiwara ◽

A Kobashi ◽

...

Keyword(s):

Quantum Well ◽

Quantum Well Structures ◽

X Ray ◽

Crystal Truncation Rod

Download Full-text

X-ray scattering from a single-quantum-well heterostructure

Semiconductor Science and Technology ◽

10.1088/0268-1242/2/4/007 ◽

1987 ◽

Vol 2 (4) ◽

pp. 241-243 ◽

Cited By ~ 25

Author(s):

T W Ryan ◽

P D Hatton ◽

S Bates ◽

M Watt ◽

C Sotomayor-Torres

Keyword(s):

Quantum Well ◽

Single Quantum ◽

Single Quantum Well ◽

X Ray ◽

X Ray Scattering ◽

Ray Scattering

Download Full-text

Disordering of InGaN/GaN Superlattices After High-Pressure Annealing

MRS Proceedings ◽

10.1557/proc-537-g3.42 ◽

1998 ◽

Vol 537 ◽

Author(s):

M.D. McCluskey ◽

L.T. Romano ◽

B.S. Krusor ◽

D. Hofstetter ◽

D.P. Bour ◽

...

Keyword(s):

Quantum Well ◽

Secondary Ion Mass Spectrometry ◽

Multiple Quantum Well ◽

Blue Shift ◽

Multiple Quantum ◽

X Ray Diffraction ◽

X Ray ◽

Annealing Temperatures ◽

Composition Profiles ◽

Secondary Ion

AbstractInterdiffusion of In and Ga is observed in InGaN multiple-quantum-well superlattices for annealing temperatures of 1250 to 1400°C. Hydrostatic pressures of up to 15 kbar were applied during the annealing treatments to prevent decomposition of the InGaN and GaN. In as-grown material, x-ray diffraction spectra show InGaN superlattice peaks up to the fourth order. After annealing at 1400°C for 15 min, only the zero-order InGaN peak is observed, a result of compositional disordering of the superlattice. Composition profiles from secondary ion mass spectrometry indicate significant diffusion of Mg from the p-type GaN layer into the quantum well region. This Mg diffusion may lead to an enhancement of superlattice disordering. For annealing temperatures between 1250 and 1300°C, a blue shift of the InGaN spontaneous emission peak is observed, consistent with interdiffusion of In and Ga in the quantum-well region.

Download Full-text