Quench Factor Analysis

Author(s):  
Rosa L. Simencio Otero ◽  
Patricia M. Kavalco ◽  
Lauralice C. F. Canale ◽  
George E. Totten ◽  
Lemmy Meekisho

One of the steps of the heat treatment process of age-hardenable aluminum alloys is the quenching process in which the alloy is cooled from the solutionizing temperature. The objective is to quench sufficiently fast to avoid undesirable concentration of alloying elements in the defect and grain boundary structure while at the same time not quenching faster than necessary to minimize residual stresses, which may lead to excessive distortion, or cracking. Various studies have been conducted to predict the relative quench rate sensitivity to yield different properties for age-hardenable alloys. Of these different predictive methods, the one that showed the more realistic results is quench factor analysis (QFA) since it involves a correlation of the cooling curve (time–temperature curve) of the cooling process throughout the quenching cycle for the desired cross-section size of interest with a C-curve (Time–Temperature–Property Curve) for the specific alloy of interest. The QFA numerical procedure has evolved since its original introduction. A review of the basic assumptions of the classical QFA model will be provided here, which will include discussion of the various improvements to the classical model that have been proposed over the intervening years since its introduction.

Author(s):  
P. Humble

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.


Author(s):  
D. Cherns

The use of high resolution electron microscopy (HREM) to determine the atomic structure of grain boundaries and interfaces is a topic of great current interest. Grain boundary structure has been considered for many years as central to an understanding of the mechanical and transport properties of materials. Some more recent attention has focussed on the atomic structures of metalsemiconductor interfaces which are believed to control electrical properties of contacts. The atomic structures of interfaces in semiconductor or metal multilayers is an area of growing interest for understanding the unusual electrical or mechanical properties which these new materials possess. However, although the point-to-point resolutions of currently available HREMs, ∼2-3Å, appear sufficient to solve many of these problems, few atomic models of grain boundaries and interfaces have been derived. Moreover, with a new generation of 300-400kV instruments promising resolutions in the 1.6-2.0 Å range, and resolutions better than 1.5Å expected from specialist instruments, it is an appropriate time to consider the usefulness of HREM for interface studies.


Author(s):  
Brian Ralph ◽  
Barlow Claire ◽  
Nicola Ecob

This brief review seeks to summarize some of the main property changes which may be induced by altering the grain structure of materials. Where appropriate an interpretation is given of these changes in terms of current theories of grain boundary structure, and some examples from current studies are presented at the end of this paper.


1975 ◽  
Vol 36 (C4) ◽  
pp. C4-17-C4-22 ◽  
Author(s):  
R. W. BALLUFFI ◽  
P. J. GOODHEW ◽  
T. Y. TAN ◽  
W. R. WAGNER

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