ELECTROCHEMICAL REFERENCE ELECTRODE FOR THE ION-SELECTIVE FIELD EFFECT TRANSISTOR

1982 ◽  
Vol 11 (3) ◽  
pp. 307-310 ◽  
Author(s):  
Shu Tahara ◽  
Mitsuyoshi Yoshii ◽  
Syotaro Oka
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Reference Electrode ◽  
Effect Transistor

scholarly journals Two-Channel Graphene pH Sensor Using Semi-Ionic Fluorinated Graphene Reference Electrode

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4184
Author(s):  
Dae Hoon Kim ◽  
Woo Hwan Park ◽  
Hong Gi Oh ◽  
Dong Cheol Jeon ◽  
Joon Mook Lim ◽  
...  
Keyword(s):  
Electrolyte Solution ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Characteristic Curve ◽  
Reference Electrode ◽  
Reference Channel ◽  
Buffer Solution ◽  
Positive Direction ◽  
Effect Transistor

A reference electrode is necessary for the working of ion-sensitive field-effect transistor (ISFET)-type sensors in electrolyte solutions. The Ag/AgCl electrode is normally used as a reference electrode. However, the Ag/AgCl reference electrode limits the advantages of the ISFET sensor. In this work, we fabricated a two-channel graphene solution gate field-effect transistor (G-SGFET) to detect pH without an Ag/AgCl reference electrode in the electrolyte solution. One channel is the sensing channel for detecting the pH and the other channel is the reference channel that serves as the reference electrode. The sensing channel was oxygenated, and the reference channel was fluorinated partially. Both the channels were directly exposed to the electrolyte solution without sensing membranes or passivation layers. The transfer characteristics of the two-channel G-SGFET showed ambipolar field-effect transistor (FET) behavior (p-channel and n-channel), which is a typical characteristic curve for the graphene ISFET, and the value of VDirac was shifted by 18.2 mV/pH in the positive direction over the range of pH values from 4 to 10. The leakage current of the reference channel was 16.48 nA. We detected the real-time pH value for the two-channel G-SGFET, which operated stably for 60 min in the buffer solution.

A Platinum Reference Electrode for Ion-Sensitive Field-Effect Transistor

2019 ◽  
Vol 19 (6) ◽  
pp. 2003-2008
Author(s):  
Dan Zhao ◽  
Junkai Zhang ◽  
Jingwei Zhang ◽  
Ming Xu ◽  
Dongping Wu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Reference Electrode ◽  
Effect Transistor

Miniaturized Reference Electrode Based on a Perchlorate-Selective Field Effect Transistor

1995 ◽  
Vol 67 (24) ◽  
pp. 4586-4588 ◽  
Author(s):  
Wilhelm. Poetter ◽  
Christa. Dumschat ◽  
Karl. Cammann
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Reference Electrode ◽  
Effect Transistor

Effect of reference electrode in the nanoFET (field‐effect transistor)‐based biosensor experiment

2014 ◽  
Vol 9 (12) ◽  
pp. 874-876 ◽  
Author(s):  
Yeong‐Tai Seo ◽  
Kuk Jin Jang ◽  
Min‐Ho Lee ◽  
Woo‐Kyeong Seong ◽  
Kook‐Nyung Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Reference Electrode ◽  
Effect Transistor

Field Effect Transistor-based Bimolecular Sensor Employing a Pt Reference Electrode for the Detection of Deoxyribonucleic Acid Sequence

2004 ◽  
Vol 43 (6B) ◽  
pp. 3855-3859 ◽  
Author(s):  
Dong-Sun Kim ◽  
Hey-Jung Park ◽  
Hwan-Mok Jung ◽  
Jang-Kyoo Shin ◽  
Pyung Choi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Deoxyribonucleic Acid ◽  
Reference Electrode ◽  
Effect Transistor

Stable Thin-Film Reference Electrode on Plastic Substrate for All-Solid-State Ion-Sensitive Field-Effect Transistor Sensing System

2017 ◽  
Vol 38 (10) ◽  
pp. 1469-1472 ◽  
Author(s):  
Qiaofeng Li ◽  
Wei Tang ◽  
Yuezeng Su ◽  
Yukun Huang ◽  
Sai Peng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Reference Electrode ◽  
Plastic Substrate ◽  
Sensing System ◽  
Effect Transistor

scholarly journals Enhancing Potentiometric Response of Electrochemical Sensor Using Modified Ion-Sensitive Transistor

2019 ◽  
Author(s):  
Vishnuram Abhinav ◽  
Rajul Patkar ◽  
Madhuri Vinchurkar ◽  
Tejas R. Naik ◽  
Maryam Shojaei Baghini
Keyword(s):  
Solid State ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Limit Of Detection ◽  
Reference Electrode ◽  
Electrochemical Sensing ◽  
Circuit Board ◽  
Sensing Element ◽  
Single Plane ◽  
Effect Transistor

In this work, we present a novel combination of solid-state ion-selective electrode and field effect transistor (FET) integrated on same platform. Thus, creating an extended gate field effect transistor (EGFET). We have built an electrochemical sensing unit comprised of all solid-state electrodes, an Ag/AgCl reference electrode and ionophore coated gold electrode. Unlike any of the earlier reports, all the electrodes are integrated with a FET in a single plane of the printed circuit board (PCB), hence mitigating the issues of separate wire bonding or external connection between the sensing element and the transducer by using PCB traces. In this work, we demonstrate for the first time, the use of ion sensitive electrode (ISE) in EGFET configuration without degrading the linearity and sensitivity due to the external voltage bias. Potentiometric measurement on our K + ISE shows near Nernstian limit sensitivity (49 mV/decade), low concentration for the limit of detection (10 −6 M), and linearity over a large range of detection(10 −4 M to 1 M).

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