scholarly journals (355)Internal Polymerization of Vinyl Compounds in the Fiber Itself. I. Internal Polymerization of Vinyl Acetate from Vapour Phase in Silk Fiber.

1953 ◽  
Vol 56 (10) ◽  
pp. 763-765
Author(s):  
Michiharu Negishi ◽  
Kozo Arai
Keyword(s):  
Vinyl Acetate ◽  
Vapour Phase ◽  
Silk Fiber

scholarly journals OPTIMIZATION OF VINYL ACETATE PRODUCTION PROCESS

2021 ◽  
pp. 187-191
Author(s):  
Firdavsiy Buronov ◽  
Normurot Fayzullayev
Keyword(s):  
Production Process ◽  
Vinyl Acetate ◽  
Active Sites ◽  
Potassium Acetate ◽  
Vapour Phase ◽  
Kinetics And Mechanism ◽  
Total Rate ◽  
Acetate Production ◽  
Catalyst Efficiency

In the article, the kinetic laws and kinetics and mechanism of the oxidation acetylationreaction of ethylene in the vapour phase were studied in detail in a catalyst containing0,4%Рd+4%Cu+7%CH3COOK/HSZ. It was found that the total rate of the reaction was proportionalto the amount of unmodified and modified active sites of palladium (not clusters). Excess amountsof the modifier (both potassium acetate and copper) have been shown to block active sites byreducing catalyst efficiency.

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Screening of selected essential oils for antibacterial activity in vapour phase

Planta Medica ◽  
2007 ◽  
Vol 73 (09) ◽  
Author(s):  
L Nedorostova ◽  
P Kloucek ◽  
M Stolcova ◽  
L Kokoska
Keyword(s):  
Antibacterial Activity ◽  
Essential Oils ◽  
Vapour Phase

DETERMINATION OF ALDOSTERONE AND DEOXYCORTICOSTERONE IN PLASMA USING 3H-ACETIC ANHYDRIDE AND VAPOUR PHASE ACETYLATION

1969 ◽  
Vol 61 (1_Suppl) ◽  
pp. S12 ◽  
Author(s):  
V. H. T. James ◽  
A. E. Rippon ◽  
M. L. Arnold
Keyword(s):  
Acetic Anhydride ◽  
Vapour Phase
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