scholarly journals Time Change in Spatial Distributions of Light Interception and Photosynthetic Rate of Paprika Estimated by Ray-tracing Simulation

2019 ◽  
Vol 28 (4) ◽  
pp. 279-285
Author(s):  
Woo Hyun Kang ◽  
Inha Hwang ◽  
Dae Ho Jung ◽  
Dongpil Kim ◽  
Jaewoo Kim ◽  
...  
Agronomy ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 1545
Author(s):  
Jaewoo Kim ◽  
Woo Hyun Kang ◽  
Jung Eek Son

In plant factories, light is fully controllable for crop production but involves a cost. For efficient lighting, light use efficiency (LUE) should be considered as part of light environment design. The objectives of this study were to evaluate and interpret the light interception, photosynthetic rate, and LUE of lettuces under electrical lights using ray-tracing simulation. The crop architecture model was constructed by 3D scanning, and ray-tracing simulation was used to interpret light interception and photosynthesis. For evaluation of simulation reliability, measured light intensities and photosynthetic rates in a growth chamber were compared with those obtained by simulation at different planting densities. Under several scenarios modeling various factors affecting light environments, changes in light interception and LUE were interpreted. The light intensities and photosynthetic rates obtained by simulation showed good agreement with the measured values, with R2 > 0.86. With decreasing planting density, the light interception of the central plant increased by approximately 18.7%, but that of neighboring plants decreased by approximately 5.5%. Under the various scenarios, shorter lighting distances induced more heterogenetic light distribution on plants and caused lower light interception. Under a homogenous light distribution, the light intensity was optimal at approximately 360 μmol m−2 s−1 with an LUE of 6.5 g MJ−1. The results of this study can provide conceptual insights into the design of light environments in plant factories.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1056
Author(s):  
Marcus Baumgart ◽  
Norbert Druml ◽  
Markus Dielacher ◽  
Cristina Consani

Robust, fast and reliable examination of the surroundings is essential for further advancements in autonomous driving and robotics. Time-of-Flight (ToF) camera sensors are a key technology to measure surrounding objects and their distances on a pixel basis in real-time. Environmental effects, like rain in front of the sensor, can influence the distance accuracy of the sensor. Here we use an optical ray-tracing based procedure to examine the rain effect on the ToF image. Simulation results are presented for experimental rain droplet distributions, characteristic of intense rainfall at rates of 25 mm/h and 100 mm/h. The ray-tracing based simulation data and results serve as an input for developing and testing rain signal suppression strategies.


2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Hyun Wook Moon ◽  
Woojoong Kim ◽  
Sewoong Kwon ◽  
Jaeheung Kim ◽  
Young Joong Yoon

A simple and exact closed-form equation to determine a penetrated ray path in a ray tracing is proposed for an accurate channel prediction in indoor environments. Whereas the penetrated ray path in a conventional ray tracing is treated as a straight line without refraction, the proposed method is able to consider refraction through the wall in the penetrated ray path. Hence, it improves the accuracy in ray tracing simulation. To verify the validation of the proposed method, the simulated results of conventional method, approximate method, and proposed method are compared with the measured results. The comparison shows that the proposed method is in better agreement with the measured results than the conventional method and approximate method, especially in high frequency bands.


2008 ◽  
Vol 56 (3) ◽  
pp. 848-857 ◽  
Author(s):  
Franco Fuschini ◽  
Hassan El-Sallabi ◽  
Vittorio Degli-Esposti ◽  
Lasse Vuokko ◽  
Doriana Guiducci ◽  
...  

2021 ◽  
Vol 54 (2) ◽  
Author(s):  
Hongyu Peng ◽  
Tuerxun Ailihumaer ◽  
Fumihiro Fujie ◽  
Zeyu Chen ◽  
Balaji Raghothamachar ◽  
...  

Residual contrast of threading edge dislocations is observed in synchrotron back-reflection X-ray topographs of 4H-SiC epitaxial wafers recorded using basal plane reflections where both g · b = 0 and g · b × l = 0. The ray-tracing simulation method based on the orientation contrast formation mechanism is applied to simulate images of such dislocations by applying surface relaxation effects. The simulated contrast features match the observed features on X-ray topographs, clearly demonstrating that the contrast is dominated by surface relaxation. Depth profiling indicates that the surface relaxation primarily takes place within a depth of 5 µm below the surface.


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