OS1216 Criterion of crack initiation at interface edge between a 20-nm-thick Cu thin film and a Si substrate

2008 ◽  
Vol 2008 (0) ◽  
pp. _OS1216-1_-_OS1216-2_
Author(s):  
Tetsuya Shishido ◽  
Yoshimasa Takahashi ◽  
Takashi Sumigawa ◽  
Takayuki Kitamura
2005 ◽  
Vol 297-300 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina

A new specimen is proposed to measure the interfacial toughness between the Al-0.5%Cu thin film and the Si substrate. The plain and general micro-fabrication processes are sufficient to fabricate the specimen. With the help of the finite element method and the concepts of the linear elastic fracture mechanics, the detailed structure for this specimen is modeled and evaluated. The results obtained from this research show that the proposed specimen provides efficient and convenient method to measure the interfacial toughness between the Al-Cu thin film and the Si substrate.


Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina

2015 ◽  
Vol 645-646 ◽  
pp. 912-919
Author(s):  
Xiao Yuan Wang ◽  
Ya Bin Yan

A nanocantilever bending method is developed to investigate the interface cracking in multilayered nanoscale materials basing on the technology of the focused ion beam (FIB) and the transmission electron microscopy (TEM). With FIB, a nanocantilever specimen consisting of 20-nm-thick copper (Cu) layer and 500-nm-thick silicon nitride (SiN) layer on a silicon (Si) substrate is fabricated from a macroscale multi-layered material (Si/Cu/SiN) with the proposed method. By using a minute loading apparatus, the loading experiment is conducted in TEM, and the crack initiation at the edge of Cu/Si interface in different specimens is in situ observed. The critical stress fields at crack initiation are analyzed with the finite element method, and both normal and shear stresses concentrate at the region of 100 nm from the interface edge in all specimens. In addition, the normal stress is much larger than the shear one. A close observation on stress fields shows that the normal stress field at the area 20 nm–30 nm away from interface edge produces the local criterion for crack initiation at the edge of Cu/Si interface in nanoscale components.


2012 ◽  
Vol 1415 ◽  
Author(s):  
T. Kitamura ◽  
T. Sumigawa

ABSTRACTWe have investigated the criterion of interfacial crack initiation in nanometer-scale components (nano-components) by means of a loading facility built in a transmission electron microscope (TEM). Three types of experiments are conducted in this project. (1) In order to clarify the applicability of conventional continuum mechanics to the nano-components, we prepare cantilever specimens with different size, which introduce different stress fields, containing an interface between a 20 nm-thick copper (Cu) thin film and a silicon (Si) substrate. These demonstrate the validity of the “stress” criterion even for the nano-scale fracture. (2) In order to examine the effect of microscopic structure on the mechanical property, we fabricate a bending specimen in the nano-scale with thin Cu bi-crystal (the thickness of about 100 nm) formed on Si substrate, of which understructure can be observed in situ by means of a TEM during the mechanical experiment. The initial plastic deformation takes place near the interface edge in a grain with a high critical resolved shear stress and expands preferentially in the grain. Then, the plasticity appears near the between Cu grain boundary and Cu/Si interface, and this development brings about the interfacial cracking from the junction. These indicate the governing influence of understructure on the mechanical property in the nano-components. (3) In order to investigate the fatigue behavior of metal in a nano-component, a cyclic bending experiment is carried out using nano-cantilever specimens with a 20 nm-thick Cu constrained by highly rigid materials (Si and SiN). The high strain region is in the size of 20-40 nm near the interface edge. The specimen breaks along the Cu/Si interface before the maximum load under the fatigue loading. The load-displacement curve shows nonlinear behavior and a distinct hysteresis loop, indicating plasticity in the Cu film. Reverse yielding appearing after the 2nd cycle suggests the development of a cyclic substructure in the Cu film. These indicate that the crack is caused by characteristic understructure owing to fatigue cycles.


2004 ◽  
Vol 53 (8) ◽  
pp. 846-849 ◽  
Author(s):  
Masataka HASEGAWA ◽  
Shigenori SUZUKI ◽  
Shoji KAMIYA ◽  
Masumi SAKA
Keyword(s):  

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