OS1107 Crack Initiation at the center of Interface between Cu Thin Film and Si Substrate in Nano-sized Component

2009 ◽  
Vol 2009 (0) ◽  
pp. 113-114
Author(s):  
Takashi SUMIGAWA ◽  
Tetsuya SHISHIDO ◽  
Takayuki KITAMURA
Keyword(s):  
Thin Film ◽  
Crack Initiation ◽  
Si Substrate ◽  
Cu Thin Film

OS1216 Criterion of crack initiation at interface edge between a 20-nm-thick Cu thin film and a Si substrate

2008 ◽  
Vol 2008 (0) ◽  
pp. _OS1216-1_-_OS1216-2_
Author(s):  
Tetsuya Shishido ◽  
Yoshimasa Takahashi ◽  
Takashi Sumigawa ◽  
Takayuki Kitamura
Keyword(s):  
Thin Film ◽  
Crack Initiation ◽  
Si Substrate ◽  
Cu Thin Film ◽  
20 Nm ◽  
Interface Edge

A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate

2005 ◽  
Vol 297-300 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina
Keyword(s):  
Thin Film ◽  
The Finite Element Method ◽  
Si Substrate ◽  
Detailed Structure ◽  
Micro Fabrication ◽  
Interfacial Toughness ◽  
Linear Elastic ◽  
Elastic Fracture ◽  
Cu Thin Film ◽  
Research Show

A new specimen is proposed to measure the interfacial toughness between the Al-0.5%Cu thin film and the Si substrate. The plain and general micro-fabrication processes are sufficient to fabricate the specimen. With the help of the finite element method and the concepts of the linear elastic fracture mechanics, the detailed structure for this specimen is modeled and evaluated. The results obtained from this research show that the proposed specimen provides efficient and convenient method to measure the interfacial toughness between the Al-Cu thin film and the Si substrate.

A New Specimen for Measuring the Interfacial Toughness of Al-0.5%Cu Thin Film on Si Substrate

2005 ◽  
pp. 521-526
Author(s):  
Insu Jeon ◽  
Masaki Omiya ◽  
Hirotsugu Inoue ◽  
Kikuo Kishimoto ◽  
Tadashi Asahina
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Interfacial Toughness ◽  
Cu Thin Film

scholarly journals An Evaluation of the Adhesive Toughness of Cu Thin Film on Si Substrate

2004 ◽  
Vol 53 (8) ◽  
pp. 846-849 ◽  
Author(s):  
Masataka HASEGAWA ◽  
Shigenori SUZUKI ◽  
Shoji KAMIYA ◽  
Masumi SAKA
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Cu Thin Film

Study of the quality of GaAs thin film on Si substrate by X-ray diffraction method

1990 ◽  
Vol 7 (7) ◽  
pp. 308-311
Author(s):  
Li Chaorong ◽  
Mai Zhenhong ◽  
Cui Shufan ◽  
Zhou Junming ◽  
Yutian Wang
Keyword(s):  
Thin Film ◽  
Diffraction Method ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

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