Observation of dislocation walls in a cyclically deformed Fe-Si alloy

2019 ◽  
Vol 2019 (0) ◽  
pp. OS1718
Author(s):  
Hiroshi SHUTO ◽  
Tomotaka MIYAZAWA ◽  
Shigeo ARAI ◽  
Toshiyuki FUJII
Keyword(s):  
2008 ◽  
Vol 137 ◽  
pp. 21-28 ◽  
Author(s):  
Andre Rivière ◽  
Michel Gerland ◽  
Veronique Pelosin

Internal friction peaks observed in single or polycrystals are clearly due to a dislocation relaxation mechanism. Because a sample observed by transmission electron microscopy (TEM) often exhibits in the same time various dislocation microstructures (isolated dislocations, dislocation walls, etc.) it is very difficult to connect the observed relaxation peak with a particular dislocation microstructure. Using isothermal mechanical spectroscopy (IMS), it is easier to compare, for instance, the evolution of a relaxation peak with measurement temperature to the microstructural evolution observed by in-situ TEM at the same temperatures. IMS was used to study a relaxation peak in a 5N aluminium single crystal firstly 1% cold worked and then annealed at various temperatures. TEM experiments performed in the same material at various temperatures equal to the temperatures used for the damping experiments made possible to link this internal friction peak with a relaxation effect occurring inside dislocation walls. In two other experiments in a 4N aluminium polycrystal and in a metal matrix composite with SiC whiskers, it is shown that the observed relaxation peaks are connected to the motion of dislocations inside polygonization boundaries in the first case and in dislocation pile-ups around each whisker in the second one. Theoretical models proposed to explain such relaxation peaks due to a dislocation motion inside a dislocation wall or network are discussed.


1981 ◽  
Vol 44 (6) ◽  
pp. 1351-1361 ◽  
Author(s):  
P. Charsley ◽  
D. Kuhlmann-wilsdorf
Keyword(s):  

1979 ◽  
Vol 10 (7) ◽  
pp. 855-860 ◽  
Author(s):  
C. Carry ◽  
S. Dermarkar ◽  
J. L. Strudel ◽  
B. C. Wonsiewicz

2020 ◽  
Vol 60 (2) ◽  
pp. 377-381 ◽  
Author(s):  
Hiroshi Shuto ◽  
Yuhei Tanaka ◽  
Tomotaka Miyazawa ◽  
Shigeo Arai ◽  
Toshiyuki Fujii

2013 ◽  
Vol 740-742 ◽  
pp. 91-94 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Yu Yang ◽  
Rafael Dalmau ◽  
Baxter Moody ◽  
H. Spalding Craft ◽  
...  

A systematic study on the density and distribution of extended defects in a typical single crystal AlN boule grown by the physical vapor transport (PVT) method has been carried out in order to gain a detailed understanding of the formation of defects such as dislocations and low angle grain boundaries (LAGBs). Boule surface studies reveal that LAGBs are nucleated during initial stages of growth and propagate to the end of growth. Basal plane dislocations (BPDs) are generated during growth due to thermal gradient stresses. Higher BPD densities are found near the LAGBs at the boule edges due to additional stresses from constrained growth. Threading edge dislocations (TEDs) are typically replicated from the seed, and LAGBs composed of arrays of threading dislocation walls are formed to accommodate the c-axis rotation between different groups of threading screw dislocation (TSD) mediated growth centers.


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