Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)
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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Effects of grain boundaries on TFTs formed by high-temperature MILC

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904218 ◽

2002 ◽

Author(s):

Zhikuan Zhang ◽

Hongmei Wang ◽

Mansun Chan ◽

S. Jagar ◽

M.C. Poon ◽

...

Keyword(s):

High Temperature ◽

Grain Boundaries

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Role of oxygen on the implantation related residual defects in silicon

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904228 ◽

2002 ◽

Author(s):

Jianqing Wen ◽

J. Evans-Freeman ◽

A.R. Peaker ◽

J.P. Zhang ◽

P.L.F. Hemment ◽

...

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A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904215 ◽

2002 ◽

Cited By ~ 1

Author(s):

Seonghearn Lee

Keyword(s):

Channel Length ◽

Capacitance Method ◽

S Parameters ◽

Effective Channel

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A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904222 ◽

2002 ◽

Author(s):

Bei Ping Yan ◽

E.S. Yang

Keyword(s):

Silicon Nitride

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Direct observation of ordered structures during oxidation of Si(111)

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904209 ◽

2002 ◽

Author(s):

J.Z. He ◽

J.B. Xu ◽

M.S. Xu ◽

J. Xu ◽

C.H. Ng ◽

...

Keyword(s):

Direct Observation ◽

Ordered Structures

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A new Self-Aligned Asymmetric Structure (SAAS) for 0.1 μm MOSFET technology

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904216 ◽

2002 ◽

Author(s):

Chang-Soon Choi ◽

Kyung-Whan Kim ◽

Woo-Young Choi

Keyword(s):

Asymmetric Structure

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Effect of electric field on the energy levels of two interacting electrons in a quantum dot

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904224 ◽

2002 ◽

Author(s):

C. Chakraborty ◽

P.T. Lai ◽

S. Chakraborty

Keyword(s):

Quantum Dot ◽

Electric Field ◽

Energy Levels ◽

Interacting Electrons

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Measurement of Young's modulus of nickel silicide film by a surface profiler

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904217 ◽

2002 ◽

Author(s):

Ming Qin ◽

C.Y. Yuen ◽

M.C. Poon ◽

W.Y. Chan

Keyword(s):

Young’S Modulus ◽

Young's Modulus ◽

Nickel Silicide ◽

Silicide Film

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TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904219 ◽

2002 ◽

Author(s):

C.Y. Yuen ◽

M.C. Poon ◽

M. Chan ◽

W.Y. Chan ◽

M. Qin

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Polysilicon Film

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Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Effects of grain boundaries on TFTs formed by high-temperature MILC

Role of oxygen on the implantation related residual defects in silicon

A new RF capacitance method to extract the effective channel length of MOSFET's using S-parameters

A self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique

Direct observation of ordered structures during oxidation of Si(111)

A new Self-Aligned Asymmetric Structure (SAAS) for 0.1 μm MOSFET technology

Effect of electric field on the energy levels of two interacting electrons in a quantum dot

Measurement of Young's modulus of nickel silicide film by a surface profiler

TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)
Latest Publications