Silicon-on-insulator chip-to-chip coupling via out-of-plane or vertical grating couplers

2012 ◽  
Vol 51 (34) ◽  
pp. 8090 ◽  
Author(s):  
Miguel Cabezón ◽  
Ignacio Garcés ◽  
Asier Villafranca ◽  
José Pozo ◽  
Pragati Kumar ◽  
...  
2001 ◽  
Vol 705 ◽  
Author(s):  
A. Dietzel ◽  
R. Berger ◽  
H. Grimm ◽  
C. Schug ◽  
W. H. Bruenger ◽  
...  

AbstractCo/Pt thin film multilayers with strong perpendicular anisotropy and out-of-plane coercivities of 5-11 kOe were magnetically altered in areas of local ion beam interaction. The ion irradiations were performed by ion projection through silicon stencil masks fabricated by silicon on insulator (SOI) membrane technology. The ion projector at the Fraunhofer Institute for Silicon Technology (ISiT) was operated at 73 keV ion energy and with a 8.7- fold demagnification. After exposure to 3 × 1014Ar+/ cm2 magnetic islands smaller than 100 nm in diameter were resolved in the Co/Pt multilayersby means of magnetic force microscopy. The impact of different ion species (He+, Ar+ and Xe+) and ion energies (10 – 200 keV) on the multilayer structure was evaluated using Monte Carlo simulations. The ballistic interface intermixing was used to predict magnetic coercivity changes for various irradiation conditions. The simulations revealed that with 73 keV Ar+ and Xe+ ions the irradiation dose could be reduced by a factor of 100 and 400 respectively in comparison to 73 keV He+which was verified in the experiments. X-ray reflectivity measurements confirmed that the Co/Pt superlattice structure is slightly weakened during the irradiation and that the surface smoothness of the media is preserved. Using the Ion Projection Process Development Tool (PDT) at IMS-Vienna concentric data tracks including head positioning servo informations were patterned onto a 1” IBM microdrive™ glass disk which was coated with Co/Pt multilayers. In a single exposure step several tracks within an exposure field of 17 mm in diameter were structured by 2 × 1015He+/ cm2 at 45 keV using a 4- fold demagnification set-up.


2020 ◽  
Vol 26 (2) ◽  
pp. 1-6 ◽  
Author(s):  
Niklas Hoppe ◽  
Wissem Sfar Zaoui ◽  
Lotte Rathgeber ◽  
Yun Wang ◽  
Rouven H. Klenk ◽  
...  

2009 ◽  
Vol 27 (5) ◽  
pp. 612-618 ◽  
Author(s):  
Frederik Van Laere ◽  
Wim Bogaerts ◽  
Pieter Dumon ◽  
GÜnther Roelkens ◽  
Dries Van Thourhout ◽  
...  

Author(s):  
Risaku Toda ◽  
Eui-Hyeok Yang

This paper describes design, fabrication and characterization of a proof-of-concept vertical travel linear microactuator designed to provide out-of-plane actuation for high precision positioning applications in space. The microactuator is designed to achieve vertical actuation travel by incorporating compliant beam structures within a SOI (Silicon on Insulator) wafer. Device structure except for the piezoelectric actuator is fabricated on the SOI wafer using Deep Reactive Ion Etch (DRIE) process. Incremental travel distance of the piezoelectric actuator is adjustable at nanometer level by controlling voltage. Bistable beam geometry is employed to minimize initial gaps between electrodes. The footprint of an actuator is approximately 2 mm × 4 mm. Actuation is characterized with LabVIEW-based test bed. Actuation voltage sequence is generated by the LabVIEW controlled power relays. Vertical actuation in the range of 500 nm over 10-cycle was observed using WYKO RST Plus Optical Profiler.


Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1028 ◽  
Author(s):  
Eurico Esteves Moreira ◽  
João Gaspar ◽  
Luis Alexandre Rocha

A Lorentz force MEMS magnetometer based on a double-ended tuning fork (DETF) for out-of-plane sensing is presented here. A novel configuration using a hexagonal-shaped Lorentz force transducer is used, which simplifies the sensor configuration and improves its sensitivity. Frequency modulated devices were fabricated in an in-house process on silicon on insulator wafers (SOI) and then tested in vacuum. The final devices have a differential configuration and experimental characterization shows a sensitivity of 4.59 Hz/mT for a total input current (on the Lorentz bar) of 1.5 mA.


Author(s):  
Chao Qiu ◽  
Zhen Sheng ◽  
Le Li ◽  
Albert Pang ◽  
Aiming Wu ◽  
...  

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