A Thin Film Black Phosphorus Light-Emitting Diode

2020 ◽  
Author(s):  
Junjia Wang ◽  
Adrien Rousseau ◽  
Mei Yang ◽  
Tony Low ◽  
Sebastien Francoeur ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diode ◽  
Black Phosphorus ◽  
Light Emitting

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

Double-Crystalline Silicon Channel Thin Film Transistors Fabricated Using Continuous-Wave Green Laser for Large Organic Light-Emitting Diode Displays

2013 ◽  
Vol 52 (3S) ◽  
pp. 03BB02 ◽  
Author(s):  
Hiroshi Hayashi ◽  
Arinobu Kanegae ◽  
Kenichirou Nishida ◽  
Takahiro Kawashima ◽  
Tohru Saitoh ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Continuous Wave ◽  
Crystalline Silicon ◽  
Light Emitting Diode ◽  
Green Laser ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

2015 ◽  
Vol 62 (11) ◽  
pp. 6925-6933 ◽  
Author(s):  
Huan Ting Chen ◽  
Yuk Fai Cheung ◽  
Hoi Wai Choi ◽  
Siew Chong Tan ◽  
S. Y. Hui
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Power Loss ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Light Emitting

Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures

2004 ◽  
Vol 19 (2) ◽  
pp. 481-487 ◽  
Author(s):  
Ji-Yong Park ◽  
Hye-Hyang Park ◽  
Ki-Yong Lee ◽  
Ho-Kyoon Chung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Light Emitting Diode ◽  
Superior Performance ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Average Value ◽  
Sequential Lateral Solidification ◽  
Device Properties

Sequential lateral solidification (SLS) is known to be a promising method to make low-temperature poly-Si thin film transistors (LTPS TFTs) with superior performance for fabrication of highly circuit-integrated flat panel displays such as TFT liquid crystal display and TFT organic light-emitting diode. The dependence of TFT characteristics on the details of the SLS poly-Si microstructures was studied by varying the size, direction, and shape of the grains by applying different SLS crystallization mask patterns and processing details. The TFTs results demonstrated that various device properties and characteristics are obtained depending on the specifics of the microstructures. Nearly direction-insensitive TFTs of mobility about 300 cm2/V·s (within 5% variation of average value) were successfully fabricated by controlling the microstructures. Such a characteristic is recognized as being desirable for an optimal integration of the peripheral circuits.

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