scholarly journals Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

2016 ◽  
Vol 24 (7) ◽  
pp. 7743 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Hong Lee ◽  
Tae-Hoon Chung ◽  
Mee-Yi Ryu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2270-2272 ◽  
Author(s):  
Cheng-Huang Kuo ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Liang-Wen Wu ◽  
Jone F. Chen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped

Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer

2012 ◽  
Author(s):  
Shih-Cheng Huang ◽  
Kun-Ching Shen ◽  
Po-Min Tu ◽  
Dong-Sing Wuu ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Transition Layer ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Si Doped ◽  
Improved Performance

MOVPE growth of short-period superlattices of AlP-GaP and its application for light-emitting diodes

1992 ◽  
Vol 124 (1-4) ◽  
pp. 772-776 ◽  
Author(s):  
A. Morii ◽  
H. Okagawa ◽  
K. Hara ◽  
J. Yoshino ◽  
K. Kukimoto
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Short Period ◽  
Movpe Growth ◽  
Short Period Superlattices

Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

2012 ◽  
Vol 56 (1) ◽  
pp. 98-102 ◽  
Author(s):  
XiaoPing Liu ◽  
GuangHan Fan ◽  
ShuWen Zheng ◽  
ChangChun Gong ◽  
TaiPing Lu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Superlattice Structure ◽  
Short Period
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