Low-operation voltage of InGaN-GaN light-emitting diodes with Si-doped In/sub 0.3/Ga/sub 0.7/N/GaN short-period superlattice tunneling contact layer
2001 ◽
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2003 ◽
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2004 ◽
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2003 ◽
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2003 ◽
Vol 42
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pp. 2270-2272
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