GaN-Based Light-Emitting Diodes With Si-doped In0.23Ga0.77N/GaN Short-Period Superlattice Tunneling Contact Layer

2002 ◽  
Author(s):  
C. H. Kuo ◽  
S. J. Chang ◽  
Y. K. Su ◽  
L. W. Wu ◽  
J. K. Sheu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Contact Layer ◽  
Light Emitting ◽  
Short Period ◽  
Tunneling Contact ◽  
Si Doped

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

scholarly journals Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

2016 ◽  
Vol 24 (7) ◽  
pp. 7743 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Hong Lee ◽  
Tae-Hoon Chung ◽  
Mee-Yi Ryu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

2003 ◽  
Vol 32 (5) ◽  
pp. 411-414
Author(s):  
L. W. Wu ◽  
S. J. Chang ◽  
Y. K. Su ◽  
T. Y. Tsai ◽  
T. C. Wen ◽  
...  
Keyword(s):  
Contact Layer ◽  
Short Period ◽  
Tunneling Contact ◽  
Si Doped

Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer

2003 ◽  
Vol 24 (4) ◽  
pp. 206-208 ◽  
Author(s):  
Ru-Chin Tu ◽  
Chun-Ju Tun ◽  
J.K. Sheu ◽  
Wei-Hong Kuo ◽  
Te-Chung Wang ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Contact Layer ◽  
Short Period ◽  
Tunneling Contact ◽  
Si Doped

GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2270-2272 ◽  
Author(s):  
Cheng-Huang Kuo ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Liang-Wen Wu ◽  
Jone F. Chen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped
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