GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2270-2272 ◽  
Author(s):  
Cheng-Huang Kuo ◽  
Shoou-Jinn Chang ◽  
Yan-Kuin Su ◽  
Liang-Wen Wu ◽  
Jone F. Chen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Current Spreading ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped

Luminescence Properties of InGaN/GaN Green Light-Emitting Diodes with Si-Doped Graded Short-Period Superlattice

2021 ◽  
Vol 21 (11) ◽  
pp. 5648-5652
Author(s):  
ll-Wook Cho ◽  
Bom Lee ◽  
Kwanjae Lee ◽  
Jin Soo Kim ◽  
Mee-Yi Ryu
Keyword(s):  
Optical Properties ◽  
Decay Time ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Time Resolved ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Short Period ◽  
Si Doped

The optical properties of InGaN/GaN green light-emitting diodes (LEDs) with an undoped graded short-period superlattice (GSL) and a Si-doped GSL (SiGSL) were investigated using photoluminescence (PL) and time-resolved PL spectroscopies. For comparison, an InGaN/GaN conventional LED (CLED) without the GSL structure was also grown. The SiGSL sample showed the strongest PL intensity and the largest PL peak energy because of band-filling effect and weakened quantum- confined stark effect (QCSE). PL decay time of SiGSL sample at 10 K was shorter than those of the CLED and GSL samples. This finding was attributed to the oscillator strength enhancement by the reduced QCSE due to the Coulomb screening by Si donors. In addition, the SiGSL sample exhibited the longest decay time at 300 K, which was ascribed to the reduced defect and dislocation density. These results indicate that insertion of the Si-doped GSL structure is an effective strategy for improving the optical properties in InGaN/GaN green LEDs.

scholarly journals Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

2016 ◽  
Vol 24 (7) ◽  
pp. 7743 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Hong Lee ◽  
Tae-Hoon Chung ◽  
Mee-Yi Ryu ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Short Period ◽  
Si Doped

Device and circuit modeling of GaN/InGaN light emitting diodes (LEDs) for optimum current spreading

2003 ◽  
Vol 47 (10) ◽  
pp. 1817-1823 ◽  
Author(s):  
A. Ebong ◽  
S. Arthur ◽  
E. Downey ◽  
X.A. Cao ◽  
S. LeBoeuf ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Circuit Modeling ◽  
Current Spreading ◽  
Light Emitting

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

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