Silicon Light-emitting Device in Standard CMOS technology

2015 ◽  
Author(s):  
Kaikai Xu ◽  
Beiju Huang ◽  
Kingsley A. Ogudo ◽  
Lukas W. Snyman ◽  
Hongda Chen ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Light Emitting

Schottky barrier light emitting diode in standard CMOS technology

2011 ◽  
Author(s):  
Beiju Huang ◽  
Wei Wang ◽  
Zan Dong ◽  
Zanyun Zhang ◽  
Weilian Guo ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Light Emitting Diode ◽  
Cmos Technology ◽  
Light Emitting

Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology

2015 ◽  
Vol 51 (8) ◽  
pp. 1-6 ◽  
Author(s):  
Kaikai Xu ◽  
Qi Yu ◽  
Guannpyng Li
Keyword(s):  
Cmos Technology ◽  
Light Emitting

scholarly journals CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 966
Author(s):  
Antonio Alessio Leonardi ◽  
Maria José Lo Faro ◽  
Alessia Irrera
Keyword(s):  
Silicon Nanowires ◽  
Low Cost ◽  
Quantum Confinement Effect ◽  
High Surface ◽  
Volume Ratio ◽  
Cmos Technology ◽  
High Density ◽  
Synthesis Methods ◽  
Light Emitting ◽  
Strong Control

Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields, such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is related to the high surface to volume ratio and the simpler coupling with the industrial flat architecture. In particular, Si NWs emerge as a very promising material to couple the light to silicon. However, with the standard synthesis methods, the realization of quantum-confined Si NWs is very complex and often requires expensive equipment. Metal-Assisted Chemical Etching (MACE) is gaining more and more attention as a novel approach able to guarantee high-quality Si NWs and high density with a cost-effective approach. Our group has recently modified the traditional MACE approach through the use of thin metal films, obtaining a strong control on the optical and structural properties of the Si NWs as a function of the etching process. This method is Complementary Metal-Oxide-Semiconductors (CMOS)-technology compatible, low-cost, and permits us to obtain a high density, and room temperature light-emitting Si NWs due to the quantum confinement effect. A strong control on the Si NWs characteristics may pave the way to a real industrial transfer of this fabrication methodology for both microelectronics and optoelectronics applications.

Light-emitting devices in industrial CMOS technology

1993 ◽  
Vol 37-38 ◽  
pp. 527-533 ◽  
Author(s):  
J. Kramer ◽  
P. Seitz ◽  
E.F. Steigmeier ◽  
H. Auderset ◽  
B. Delley ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Light Emitting ◽  
Light Emitting Devices

Silicon light emitting device in CMOS technology

2007 ◽  
Vol 3 (2) ◽  
pp. 85-87 ◽  
Author(s):  
Hai-jun Liu ◽  
Ming Gu ◽  
Jin-bin Liu ◽  
Bei-ju Huang ◽  
Hong-da Chen
Keyword(s):  
Cmos Technology ◽  
Light Emitting

Design and Realization of a Novel Poly-Silicon Light-Emitting Device Based on Standard CMOS Technology

2020 ◽  
Vol 47 (7) ◽  
pp. 0701027
Author(s):  
艾康 Ai Kang ◽  
程骏骥 Cheng Junji ◽  
朱坤峰 Zhu Kunfeng ◽  
吴克军 Wu Kejun ◽  
刘钟远 Liu Zhongyuan ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Light Emitting ◽  
Poly Silicon

Erbium Doped Silicon for Light Emitting Devices

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Michel ◽  
B. Zheng ◽  
J. Palm ◽  
E. Ouellette ◽  
F. Gan ◽  
...  
Keyword(s):  
System Performance ◽  
Optical Transmission ◽  
Cmos Technology ◽  
Transmission System ◽  
Auger Process ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Processes

AbstractWe report on the excitation and de-excitation processes of erbium implanted in silicon and the integration of Si:Er light emitting devices (LED) with standard CMOS technology. We find two deexcitation processes, an Auger process below 100 K and a phonon mediated energy backtransfer above 100 K. We present the first optical voice link with a silicon LED as the emitter. Optical transmission system performance with our LED is possible below 200 K.

Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

2011 ◽  
Vol 9 (8) ◽  
pp. 082301-82304
Author(s):  
董赞 Zan Dong ◽  
王伟 Wei Wang ◽  
黄北举 Beiju Huang ◽  
张旭 Xu Zhang ◽  
关宁 Ning Guan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Light Emitting Diode ◽  
Cmos Technology ◽  
Light Emitting ◽  
Low Threshold ◽  
Silicon Based
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