Characterization of Coupling Properties of Vertically Curved Si Surface Optical Coupler Designed for Coupling with 5-µm-MFD SMF

Author(s):  
Y. Atsumi ◽  
T. Yoshida ◽  
E. Omoda ◽  
Y. Sakakibara
1997 ◽  
Vol 51 (3) ◽  
pp. 323-331 ◽  
Author(s):  
R. Georgiadis ◽  
S. G. Lambrakos ◽  
P. P. Trzaskoma-Paulette

We present a general approach for establishing correlations between the optical second-harmonic (SH) response generated from a metal/electrolyte interface and the interface structure. Our approach entails the construction of a response function for optical second-harmonic generation (SHG) from the metal surface in the presence of an electrolyte and an applied electrochemical field. The response function approach, a powerful and general method, is developed here for the first time for SHG data. Here, the response function describes the nonlinear optical response of a mesoscopic region of the surface to an applied static mesoscopic electric field and is a characterization of how the electrostatic nature of the surface responds to changes in the concentration and composition of the electrolyte. We construct the response function from experimental measurements of the SH response and from models representing known interface structure. A significant aspect of our approach is that it combines, through the modification of the response function, existing models of metal-interface structure with models for mechanisms of SHG response. Our approach provides, therefore, a framework for correlating existing and emerging models of the double layer with optical experimental measurements. Case study analyses of prototype interface systems are presented here, demonstrating applications of our approach.


1990 ◽  
Vol 200 ◽  
Author(s):  
Robert C. Baumann ◽  
Timothy A. Rost ◽  
Thomas A. Rabson

ABSTRACTThin films (.1-.6 μm) of LiNbO3 have been deposited on silicon substrates by reactive rf sputtering. Under optimized deposition conditions the resulting thin films of LiNbO3 were optically transparent, adhered well to the silicon substrates, and were found to be polycrystalline and uniaxial with the c axis oriented normal to the silicon surface. Optical microscopy and scanning electron microscopy were used to examine film morphology. Both methods indicated that the films were smooth and contained no gross irregularities. The ratio of oxygen to niobium in these films was measured by Rutherford backscattering to be approximately 3 to 1. Auger electron spectroscopy depth profiling revealed that the films had the expected ratio of Li, Nb, and O. This information, together with Bragg x-ray diffraction data, indicates that the thin films deposited on silicon were stoichiometric, crystalline LiNbO3.


Author(s):  
Simeon Bikorimana ◽  
Muhammad A. Ummy ◽  
Abdullah Hossain ◽  
Richard Lin ◽  
Roger Dorsinville
Keyword(s):  

2020 ◽  
Vol 32 (20) ◽  
pp. 1319-1322
Author(s):  
Tomoya Yoshida ◽  
Yuki Atsumi ◽  
Emiko Omoda ◽  
Youichi Sakakibara

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