An automatic method for optimization of optical parameters and electric filed distributions in thin-film polarizers

Author(s):  
Naibo Chen ◽  
Yonggang Wu ◽  
Zhenhua Wang ◽  
Leijie Ling ◽  
Zihuan Xia ◽  
...  
2016 ◽  
Vol 481 ◽  
pp. 97-103 ◽  
Author(s):  
Asim Jilani ◽  
M.Sh Abdel-wahab ◽  
Attieh A. Al-ghamdi ◽  
Ammar sadik Dahlan ◽  
I.S. Yahia

2017 ◽  
Vol 214 (11) ◽  
pp. 1700222 ◽  
Author(s):  
Daria Majchrowicz ◽  
Monika Kosowska ◽  
Przemysław Struk ◽  
Małgorzata Jędrzejewska-Szczerska

2011 ◽  
Vol 335-336 ◽  
pp. 1418-1423
Author(s):  
De Yin Zhang ◽  
Wei Qian ◽  
Kun Li ◽  
Jian Sheng Xie

The Ion Beam Enhanced Deposited (IBED) lithium tantalate (LiTaO3) thin film samples with Al/LiTaO3/Pt electrode structure were prepared on the Pt/Ti/SiO2/Si(100) and SiO2/Si(100) substrate respectively. The crystallization, surface morphology, ferroelectric property, and fatigue property of the prepared samples with the different annealed processes were investigated. The XRD measured results show that the prepared samples have the polycrystal structure of LiTaO3 with the preferred orientation of <012> and <104> located at the 2θ of 23.60 and 32.70 respectively. The SEM morphology analysis reveals the prepared film annealed at 550°C is uniform, smooth and crack-free on the surface and cross section. The ferroelectric property measured results show that the remanent polarization Pr of the samples annealed at different temperature almost increase with the electric field intensity stronger. The leakage current makes the hysteresis loop of the samples subjected to a strong measured electric filed difficult to appear the same saturation hysteresis loop as the single-crystal LiTaO3. The prepared samples annealed at 550°C have a Pr value of 11.5μC/cm2 when subjected to the electrical field of 400kV/cm. The breakdown voltage of the 587nm thick thin film sample is high as to 680 kV/cm. The fatigue property measured results show only 15.17% Pr drop of the prepared films annealed at 550°C appear after 5×1010 cycles polarized by the 10MHz sinusoidal signal with the peak-to-peak amplitude of 10 Volt. The ferroelectric properties of the prepared films meet the practical application requirements of charge response measurement of the LiTaO3 infrared detector owe to the Pr of the prepared films annealed at different temperature large beyond 10μC/cm2 when the prepared films subjected to a strong electric filed larger than 400 kV/cm. The experimental results also show that the surface morphology, the ferroelectric and fatigue properties of the IBED LiTaO3 thin films are significant better than those of the Sol-Gel derived LiTaO3 thin films.


Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.


2017 ◽  
Vol 214 (11) ◽  
pp. 1770164 ◽  
Author(s):  
Daria Majchrowicz ◽  
Monika Kosowska ◽  
Przemysław Struk ◽  
Małgorzata Jędrzejewska-Szczerska

2015 ◽  
Vol 119 (2) ◽  
pp. 268-272 ◽  
Author(s):  
A. A. Tikhii ◽  
V. A. Gritskikh ◽  
S. V. Kara-Murza ◽  
N. V. Korchikova ◽  
Yu. M. Nikolaenko ◽  
...  

2005 ◽  
Vol 83 (11) ◽  
pp. 1151-1159 ◽  
Author(s):  
K R Rajesh ◽  
C S Menon

Sandwich and planar structures are fabricated by a vacuum deposition method using iron phthalocyanine chloride (FePcCl) as an active layer and gold (Au) as electrodes. The permittivity ε of FePcCl is determined from the dependence of capacitance on film thickness. The current density – voltage characteristics characteristics of the Au/FePcCl/Au structure at room temperature are found. Thermally generated hole concentration p0, hole mobility µp, total trap concentration Nt, and depth of the trap level are estimated. The activation energies of FePcCl films are determined from Arrhenious plots of ln σ versus 1000/T. The absorption and reflectance spectra of a FePcCl thin film deposited at room temperature are recorded in the spectral range 300–900 nm. The optical band gap of a FePcCl thin film is determined from the α2 versus hν graph. The optical constants n and k are found. The real and imaginary parts of the optical dielectric constant ε1 and ε2 are calculated. These optical parameters are plotted against photonenergy. PACS Nos.: 72.80.Le, 73., 78.20.–e


2018 ◽  
Vol 6 (12) ◽  
pp. 943-947
Author(s):  
Manuj Kumar Agarwal ◽  
Manish Saxena ◽  
Shilpa Gupta

2010 ◽  
Vol 283 (20) ◽  
pp. 4074-4077 ◽  
Author(s):  
C. Tserkezis ◽  
N. Stefanou ◽  
N. Papanikolaou
Keyword(s):  

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