scholarly journals Impact of Stoichiometric Silicon Nitride Growth Conditions on Dispersion Engineering of Broadband Microresonator Frequency Combs

2021 ◽  
Author(s):  
Gregory Moille ◽  
Daron Westly ◽  
Gregory Simelgor ◽  
Kartik Srinivasan
2019 ◽  
Vol 9 (2) ◽  
pp. 255 ◽  
Author(s):  
Quentin Wilmart ◽  
Houssein El Dirani ◽  
Nicola Tyler ◽  
Daivid Fowler ◽  
Stéphane Malhouitre ◽  
...  

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.


2019 ◽  
Vol 58 (29) ◽  
pp. 8007 ◽  
Author(s):  
Zijun Yao ◽  
Yuhang Wan ◽  
Ran Bu ◽  
Zheng Zheng

Author(s):  
K.B. Alexander ◽  
H. T. Lin ◽  
P. F. Becher

Advances in the development of ceramics and ceramic composites rely on an understanding of the mechanisms which contribute to the formation of desired microstructural features or control the mechanical response of the material. For example, in silicon nitride, careful control of the liquid phase composition and growth conditions permits the development of elongated grains which provide in-situ reinforcement of the material. Electron microscopy studies have aided in understanding the solution-reprecipitation process which controls the growth of silicon nitride as well as the role of the liquid phase on this process. The composition and thickness of the residual glass phase at the grain boundaries and triple points are important for both the toughening and creep response of the material and can only be realistically analyzed by high resolution analytical and electron imaging techniques.


2021 ◽  
Author(s):  
Gregory Moille ◽  
Daron Westly ◽  
Edgar F. Perez ◽  
Ashutosh Rao ◽  
Xiyuan Lu ◽  
...  

2016 ◽  
Vol 24 (1) ◽  
pp. 687 ◽  
Author(s):  
Xiaoxiao Xue ◽  
Yi Xuan ◽  
Cong Wang ◽  
Pei-Hsun Wang ◽  
Yang Liu ◽  
...  

2017 ◽  
Vol 42 (12) ◽  
pp. 2314 ◽  
Author(s):  
David R. Carlson ◽  
Daniel D. Hickstein ◽  
Alex Lind ◽  
Stefan Droste ◽  
Daron Westly ◽  
...  

2014 ◽  
Vol 39 (12) ◽  
pp. 3535 ◽  
Author(s):  
Yoshitomo Okawachi ◽  
Michael R. E. Lamont ◽  
Kevin Luke ◽  
Daniel O. Carvalho ◽  
Mengjie Yu ◽  
...  

Author(s):  
Martin M. Roth ◽  
D. Bodenmüller ◽  
José M. Chavez Boggio ◽  
René. Eisermann ◽  
Tino Fremberg ◽  
...  

Nanophotonics ◽  
2018 ◽  
Vol 7 (8) ◽  
pp. 1461-1467 ◽  
Author(s):  
Yuhao Guo ◽  
Jing Wang ◽  
Zhaohong Han ◽  
Kazumi Wada ◽  
Lionel C. Kimerling ◽  
...  

AbstractOctave-spanning frequency comb generation in the deep mid-infrared (>5.5 μm) typically requires a high pump power, which is challenging because of the limited power of narrow linewidth lasers at long wavelengths. We propose twofold dispersion engineering for a Ge-on-Si microcavity to enable both dispersion flattening and dispersion hybridization over a wide band from 3.5 to 10 μm. A two-octave mode-locked Kerr frequency comb can be generated from 2.3 to 10.2 μm, with a pump power as low as 180 mW. It has been shown that dispersion flattening greatly enhances the spectral broadening of the generated comb, whereas dispersion hybridization improves its spectral flatness.


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