scholarly journals A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

2019 ◽  
Vol 9 (2) ◽  
pp. 255 ◽  
Author(s):  
Quentin Wilmart ◽  
Houssein El Dirani ◽  
Nicola Tyler ◽  
Daivid Fowler ◽  
Stéphane Malhouitre ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Combs ◽  
High Data ◽  
Core Technology ◽  
Rate Transmission ◽  
Optical Phased Arrays ◽  
Integration Strategies

Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

Silicon Photonics Co-integrated with Silicon Nitride for Optical Phased Arrays

2019 ◽  
Author(s):  
A. Marinins ◽  
S.P. Dwivedi ◽  
J.Ø. Kjellman ◽  
S. Kerman ◽  
T. David ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Phased Arrays ◽  
Optical Phased Arrays

scholarly journals Recent Progress in Silicon Photonics: A Review

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-27 ◽  
Author(s):  
Zhou Fang ◽  
Ce Zhou Zhao
Keyword(s):  
Integrated Circuits ◽  
Silicon Photonics ◽  
Recent Progress ◽  
State Of The Art ◽  
Low Cost ◽  
Photonic Integrated Circuits ◽  
High Data ◽  
Bandwidth Requirement ◽  
Rate Transmission ◽  
Data Rate Transmission

With the increasing bandwidth requirement in computing and signal processing, the inherent limitations in metallic interconnection are seriously threatening the future of traditional IC industry. Silicon photonics can provide a low-cost approach to overcome the bottleneck of the high data rate transmission by replacing the original electronic integrated circuits with photonic integrated circuits. Although the commercial promise has not been realized, this perspective gives huge impetus to the development of silicon photonics these years. This paper provides an overview of the progress and the state of the art of each component in silicon photonics, including waveguides, filters, modulators, detectors, and lasers, mainly in the last five years.

Silicon photonics co-integrated with silicon nitride for optical phased arrays

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGE02
Author(s):  
Aleksandrs Marinins ◽  
Sarvagya P. Dwivedi ◽  
Jon Ø. Kjellman ◽  
Sarp Kerman ◽  
Tangla David ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Photonics ◽  
Phased Arrays ◽  
Optical Phased Arrays

Recent Progress in the Understanding of Si-Nanostructures Formation in a-SiNx:H Thin Film for Si-Based Optoelectronic Devices

2011 ◽  
Vol 171 ◽  
pp. 1-17 ◽  
Author(s):  
Sarab Preet Singh ◽  
Pankaj Srivastava
Keyword(s):  
Silicon Nitride ◽  
Complementary Metal Oxide Semiconductor ◽  
Cost Effective ◽  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Light Sources ◽  
Present Contribution ◽  
Dielectric Matrix ◽  
Si Nanostructures ◽  
Shi Irradiation

There has been a rapidly increasing interest in the synthesis and characterization of Si- nanostructures embedded in a dielectric matrix, as it can lead to energy-efficient and cost-effective Complementary Metal-Oxide-Semiconductor (CMOS)-compatible Si-based light sources for optoelectronic integration. In the present contribution, first an overview of the SiOx as a dielectric matrix and its limitations are discussed. We then review the literature on hydrogenated amorphous silicon nitride (a-SiNx:H) as a dielectric matrix for Si-nanostructures, which have been carried out using silane (SiH4) and ammonia (NH3) as the reactant gases. Our studies demonstrate that the least amount of hydrogen in the as-deposited (ASD) a-SiNx:H films not only allows in-situ formation of Si-nanostructures but also stabilizes silicon nitride (Si3N4) phase. The recent advances made in controlling the shape and size of Si-nanostructures embedded in a-SiNx:H matrix by swift heavy ion (SHI) irradiation are briefly discussed.

Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides

1999 ◽  
Vol 592 ◽  
Author(s):  
Sanjit Singh Dang ◽  
Christos G. Takoudis
Keyword(s):  
Silicon Nitride ◽  
Gate Dielectric ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Total Charge ◽  
Process Improvements ◽  
Silicon Nitride Films ◽  
High Dielectric ◽  
Thermally Grown

ABSTRACTUltra-thin silicon nitride films are being studied for use as high-dielectric constant (highk) materials in future gate dielectric applications, as Complementary Metal-Oxide-Semiconductor (CMOS) transistors are scaled down to the sub-100nm regime. In this study, process modifications are proposed to reduce the total charge and interface trap densities in sub-3.5 nm-thick silicon nitride films, grown in NH3, in a conventional furnace at 900°C and 1 atm. It is shown that by employing a short (<1 min) oxynitridation step in NO, before nitridation, and oxynitridation/Ar-annealing steps, after nitridation, silicon nitride films can be thermally grown with a total charge density as low as about 2.5E10 q/cm2 and an interface trap density of about 2.1E11/(eV-cm2). Besides, the effect of using NO as opposed to N2O for oxynitridation steps is also discussed.

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