Electro-Optic Probes: High-Permittivity Crystals vs. Low-Permittivity Polymers

1995 ◽  
Author(s):  
H.-J. Cheng ◽  
J.F. Whitaker ◽  
K.J. Herrick ◽  
N. Dib ◽  
L.P.B. Katehi ◽  
...  
Keyword(s):  
High Permittivity ◽  
Electro Optic ◽  
Low Permittivity

Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity: publisher’s note

2019 ◽  
Vol 44 (24) ◽  
pp. 5904
Author(s):  
Chang-Jiang Chen ◽  
Ju-Hung Chao ◽  
Yun Goo Lee ◽  
Annan Shang ◽  
Ruijia Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Relaxor Ferroelectric ◽  
Beam Deflection ◽  
High Permittivity ◽  
Electro Optic

Silicon electro-optic modulator with high-permittivity gate dielectric layer

2009 ◽  
Vol 7 (10) ◽  
pp. 924-925 ◽  
Author(s):  
朱梦霞 Mengxia Zhu ◽  
周治平 Zhiping Zhou ◽  
郜定山 Dingshan Gao
Keyword(s):  
Dielectric Layer ◽  
Gate Dielectric ◽  
High Permittivity ◽  
Electro Optic ◽  
Electro Optic Modulator

scholarly journals Enhanced electro-optic beam deflection of relaxor ferroelectric KTN crystals by electric-field-induced high permittivity

2019 ◽  
Vol 44 (22) ◽  
pp. 5557 ◽  
Author(s):  
Chang-Jiang Chen ◽  
Ju-Hung Chao ◽  
Yun Goo Lee ◽  
Annan Shang ◽  
Ruijia Liu ◽  
...  
Keyword(s):  
Electric Field ◽  
Relaxor Ferroelectric ◽  
Beam Deflection ◽  
High Permittivity ◽  
Electro Optic

scholarly journals Infrared and THz spectroscopy of nanostructured dielectrics

2009 ◽  
Vol 3 (3) ◽  
pp. 145-155 ◽  
Author(s):  
Jan Petzelt
Keyword(s):  
Dielectric Response ◽  
Relaxor Ferroelectrics ◽  
Thz Spectroscopy ◽  
Core Shell ◽  
Epitaxial Thin Films ◽  
High Permittivity ◽  
Matrix Type ◽  
Dielectric Substrates ◽  
Effective Medium Approach ◽  
Low Permittivity

Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized. .

scholarly journals Planar Sensor for Material Characterization Based on the Sierpinski Fractal Curve

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
P. H. B. Cavalcanti Filho ◽  
J. A. I. Araujo ◽  
M. R. T. Oliveira ◽  
M. T. de Melo ◽  
M. S. Coutinho ◽  
...  
Keyword(s):  
Material Characterization ◽  
Microwave Resonator ◽  
Frequency Range ◽  
Fractal Curve ◽  
High Permittivity ◽  
Full Wave ◽  
Low Permittivity

This paper presents a planar and compact microwave resonator sensor to characterize materials. The geometry of the resonator is based on the Sierpinski fractal curve and has four poles in the frequency range from 0.5 GHz to 5.5 GHz. Any of the four poles can be used to measure samples with low permittivity values, where the first pole is suitable for samples with high permittivity values. The sensitivity of the poles and return losses of the sensor are presented and obtained using a full-wave 3D simulator software. The device is manufactured and validated through a comparison between simulated and measured results.

Simulation-Based Study of High-Permittivity Inserted-Oxide FinFET With Low-Permittivity Inner Spacers

2021 ◽  
pp. 1-6
Author(s):  
Yi-Ting Wu ◽  
Meng-Hsueh Chiang ◽  
Jone F. Chen ◽  
Tsu-Jae King Liu
Keyword(s):  
High Permittivity ◽  
Simulation Based ◽  
Low Permittivity

scholarly journals Sub-nanosecond Infrared Photodetection using III-V Colloidal Quantum Dots

2020 ◽  
Author(s):  
Bin Sun ◽  
Amin morteza najarian ◽  
Chao Zheng ◽  
Laxmi Sagar ◽  
Min-Jae Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Mobility ◽  
Colloidal Quantum Dots ◽  
Covalent Character ◽  
High Permittivity ◽  
Tunable Bandgap ◽  
Ligand Coordination ◽  
Heavy Doping ◽  
Infrared Photodetection ◽  
Low Permittivity

Abstract Colloidal quantum dots (CQDs) are promising materials for IR light detection due to their tunable bandgap and solution processing; but to date, the time response of CQD IR photodiodes has been inferior to that provided by Si and InGaAs. We reasoned that the high permittivity of II-VI CQDs leads to slow charge extraction due to screening and capacitance; whereas III-Vs – if their surface chemistry could be mastered – offer a strong covalent character for low permittivity and fast operation. In initial studies, we found that existing covalent character led to imbalanced charge transport in InAs, the result of unpassivated surfaces and uncontrolled heavy doping. We report surface management using amphoteric ligand coordination and find that it addresses simultaneously the In and As surface dangling bonds. The new InAs CQD solids combine high mobility (0.04 cm2 V-1 s-1) with a 4x reduction in permittivity compared to PbS CQDs. The resulting photodiodes achieve a response time faster than 300 ps – a more than 100x improvement compared to the best previously-reported CQD photodiodes – combined with an external quantum efficiency (EQE) of 30% at 940 nm.

scholarly journals Compact Wideband Coplanar Stripline-to-Microstrip Line Transition Using a Bended Structure on a Two-Layered Substrate

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1272
Author(s):  
Gwan Hui Lee ◽  
Wahab Mohyuddin ◽  
Sachin Kumar ◽  
Hyun Chul Choi ◽  
Kang Wook Kim
Keyword(s):  
Microstrip Line ◽  
Ultra Wideband ◽  
High Permittivity ◽  
Coplanar Stripline ◽  
High Impedance ◽  
Horizontal Length ◽  
Layered Substrate ◽  
Analytical Formulas ◽  
Transition Length ◽  
Low Permittivity

A design of a compact coplanar strip (CPS)-to-microstrip line (MSL) transition using a bended structure on a two-layered substrate is presented. The proposed transition consists of a CPS taper and a bended CPS-to-MSL transition on a two-layered substrate. The CPS taper is formed on the lower substrate with low permittivity (εr = 3.38), and the bended CPS-to-MSL transition is formed on the upper substrate with high permittivity (εr= 10.2). The proposed transition is designed with analytical formulas obtained by applying EM-based conformal mapping without parametric tuning trials. The conductor shape of the bended CPS-to-MSL transition is adjusted to form an optimal Klopfenstein impedance taper. The proposed CPS-to-MSL transition optimally connects between a high impedance CPS line (~160 Ω) and a 50 Ω MSL, which typically results in a long transition length for ultra-wideband performance. The implemented transition bended in a sinusoid shape on the two-layered substrate provides good performance from 2 GHz to 17 GHz with the maximum 2 dB insertion loss per transition, and the horizontal length of the bended transition is reduced to 42.9% of the straight transition length. This bended transition is developed for use in mm-wave balanced antenna/detector feeds but can be applied to a variety of wideband balanced circuit modules, where compact circuit size is critical.

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