Observation of the Berreman Effect in Infrared Reflection-Absorption Spectra of Amorphous Titanium Oxide Thin Films Deposited on Aluminum

2000 ◽  
Vol 54 (5) ◽  
pp. 687-691 ◽  
Author(s):  
B. C. Trasferetti ◽  
C. U. Davanzo ◽  
N. C. da Cruz ◽  
M. A. B. de Moraes

Infrared reflection-absorption spectra of plasma-enhanced chemical vapor deposition (PECVD) amorphous TiO2 thin films on aluminum were obtained with s- and p-polarized light and oblique incidence angles. Such spectra were analyzed by means of spectral simulations based on a Fresnel equation for a three-layered system. The optical constants used in the simulations were obtained through the Kramers–Krönig analysis of the reflectance spectra of a pellet of powdered amorphous TiO2. LO-TO energy-loss functions were also calculated from these optical constants, and a splitting was observed. A good qualitative agreement between experimental and simulated spectra was achieved, and the Berreman effect was observed in both cases when p-polarized light was used. It was shown, therefore, that the Berreman effect makes infrared reflection-absorption spectroscopy a successful technique for the characterization of an amorphous TiO2 thin layer on aluminum.

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.


RSC Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 4867-4871 ◽  
Author(s):  
Mingxian Wang ◽  
Weiguang Wang ◽  
Zhao Li ◽  
Xuejian Du ◽  
Xianjin Feng ◽  
...  

TiO2 thin films with anatase structure have been prepared on [LaAlO3]0.3[SrAl0.5Ta0.5O3]0.7 (LSAT) (001) substrates by metalorganic chemical vapor deposition (MOCVD) in the substrate temperature range of 500–650 °C.


2018 ◽  
Vol 2018 (1) ◽  
pp. 46-53 ◽  
Author(s):  
Michelle M. Nolan ◽  
Alexander J. Touchton ◽  
Nathaniel E. Richey ◽  
Ion Ghiviriga ◽  
James R. Rocca ◽  
...  

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