Challenges in the ambient Raman spectroscopy characterization of methylammonium lead triiodide perovskite thin films

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

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Characterization of IrO2 thin films by Raman spectroscopy

Thin Solid Films ◽

10.1016/s0040-6090(96)09545-4 ◽

1997 ◽

Vol 301 (1-2) ◽

pp. 7-11 ◽

Cited By ~ 56

Author(s):

P.C Liao ◽

C.S Chen ◽

W.S Ho ◽

Y.S Huang ◽

K.K Tiong

Keyword(s):

Thin Films ◽

Raman Spectroscopy

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Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.54 ◽

2008 ◽

Vol 47 (1) ◽

pp. 54-58 ◽

Cited By ~ 10

Author(s):

Kuninori Kitahara ◽

Hiroya Ogasawara ◽

Junji Kambara ◽

Mitsunori Kobata ◽

Yasutaka Ohashi

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Chemical Etching ◽

Polycrystalline Silicon ◽

Silicon Thin Films

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Production and Characterization of Carbon Thin Films by the Magnetron Sputtering Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.881.471 ◽

2016 ◽

Vol 881 ◽

pp. 471-474 ◽

Cited By ~ 2

Author(s):

D.L.C. Silva ◽

L.R.P Kassab ◽

J.R. Martinelli ◽

A.D. Santos ◽

M.F. Pillis

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Magnetron Sputtering ◽

Carbon Film ◽

Carbon Films ◽

Buffer Layers ◽

Degree Of Crystallinity ◽

X Ray Diffraction ◽

Carbon Thin Films

Carbon thin films were produced by the magnetron sputtering technique. The deposition of the carbon films was performed on Co buffer-layers previously deposited on c-plane (0001) sapphire substrates. The samples were thermally treated under vacuum conditions and characterized by Raman spectroscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The XRD peak related to the carbon film was observed and the Raman spectroscopy indicated a good degree of crystallinity of the carbon film.

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Characterization of vanadium oxide thin films with different stoichiometry using Raman spectroscopy

Thin Solid Films ◽

10.1016/j.tsf.2016.07.082 ◽

2016 ◽

Vol 620 ◽

pp. 64-69 ◽

Cited By ~ 36

Author(s):

Chunzi Zhang ◽

Qiaoqin Yang ◽

Cyril Koughia ◽

Fan Ye ◽

Mohsen Sanayei ◽

...

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Vanadium Oxide ◽

Oxide Thin Films ◽

Vanadium Oxide Thin Films

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Optical Characterization of C60 Organic Semiconductor and Bilayers

MRS Proceedings ◽

10.1557/proc-488-933 ◽

1997 ◽

Vol 488 ◽

Author(s):

J. P. Rainho ◽

L. Santos ◽

A. A. Kharlamov

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Optical Absorption ◽

Film Thickness ◽

Organic Semiconductor ◽

Optical Characterization ◽

Organic Dye ◽

Zinc Phthalocyanine ◽

Micro Raman Spectroscopy

AbstractPreparation and characterization either by optical absorption, photoluminescence and micro-Raman spectroscopy of individual components as well as bilayers consisting of organic dye semiconductor Zinc Phthalocyanine (ZnPc) and fullerene, C60, thin films are reported. The layers and structures were deposited in vacuum and some fullerene films were also prepared by casting the C60 solution in benzene. The optical absorption and photoluminescence dependencies on film thickness in bilayers C60/ZnPc were observed and may be discussed in a context of interface induced simmetry reduction of C60 molecules.

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