Molecular Beam Scattering and Desorption Dynamics. Vibrational and Rotational States of Desorbed Product Molecules and Surface Reaction Dynamics Studies by Molecular Beam/Infrared Emission Spectroscopy.

ABSTRACTSurface reaction mechanisms which underly the growth of III-V semiconductors by chemical beam epitaxy have been investigated using a combination of surface spectroscopic techniques in conjunction with modulated molecular beam scattering techniques. Emphasis is placed on understanding the complex growth rate effects observed during the growth of Ga(Al,In)As and the origin of selected area epitaxy. These effects are shown to arise from the surface sensitive nature of the decomposition of the group III alkyl source chemicals used in CBE.

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Reaction dynamics of O(1D) + HCOOD/DCOOH investigated with time-resolved Fourier-transform infrared emission spectroscopy

The Journal of Chemical Physics ◽

10.1063/1.4897418 ◽

2014 ◽

Vol 141 (15) ◽

pp. 154313 ◽

Cited By ~ 3

Author(s):

Shang-Chen Huang ◽

N. T. Nghia ◽

Raghunath Putikam ◽

Hue M. T. Nguyen ◽

M. C. Lin ◽

...

Keyword(s):

Fourier Transform ◽

Emission Spectroscopy ◽

Reaction Dynamics ◽

Fourier Transform Infrared ◽

Infrared Emission ◽

Time Resolved ◽

Infrared Emission Spectroscopy

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Dynamical approach to the surface reaction of triisobutylgallium (TIBGa) on GaAs(001) by using molecular beam scattering

Journal of Crystal Growth ◽

10.1016/s0022-0248(98)00058-x ◽

1998 ◽

Vol 188 (1-4) ◽

pp. 137-143 ◽

Cited By ~ 5

Author(s):

Jie Cui ◽

Masashi Ozeki ◽

Masafumi Ohashi

Keyword(s):

Molecular Beam ◽

Surface Reaction ◽

Molecular Beam Scattering ◽

Dynamical Approach ◽

Beam Scattering

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Infrared Emission Spectroscopy as a Reliability Tool

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0077 ◽

1999 ◽

Author(s):

Q. Kim ◽

S. Kayali

Keyword(s):

Spatial Resolution ◽

Emission Spectroscopy ◽

Hot Spot ◽

Cost Effective ◽

Infrared Emission ◽

Test System ◽

Operating Conditions ◽

Yield Enhancement ◽

Infrared Emission Spectroscopy ◽

Channel Temperature

Abstract In this paper, we report on a non-destructive technique, based on IR emission spectroscopy, for measuring the temperature of a hot spot in the gate channel of a GaAs metal/semiconductor field effect transistor (MESFET). A submicron-size He-Ne laser provides the local excitation of the gate channel and the emitted photons are collected by a spectrophotometer. Given the state of our experimental test system, we estimate a spectral resolution of approximately 0.1 Angstroms and a spatial resolution of approximately 0.9 μm, which is up to 100 times finer spatial resolution than can be obtained using the best available passive IR systems. The temperature resolution (<0.02 K/μm in our case) is dependent upon the spectrometer used and can be further improved. This novel technique can be used to estimate device lifetimes for critical applications and measure the channel temperature of devices under actual operating conditions. Another potential use is cost-effective prescreening for determining the 'hot spot' channel temperature of devices under normal operating conditions, which can further improve device design, yield enhancement, and reliable operation. Results are shown for both a powered and unpowered MESFET, demonstrating the strength of our infrared emission spectroscopy technique as a reliability tool.

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