AbstractA soft X-ray emission spectroscopy(SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a thin-film(e.g., Cr)/Si(substrate) contact system, where the energy of primary electrons, Ep , is less than 20keV. An interesting point of this method is that we can have a specific signal for an element to be used as a finger print, otherwise it is difficult. By using this e-beam excited SXES, we can study an interface buried deep in a rather thick overlayer, e.g., more than a hundred of nm, which is due to the fact that a mean free path of a soft X-ray or an X-ray production depth is much larger than the mean free path of an energetic electron in solids. Electronic structural study of silicides by SXES is also shown.
Nano-scale Surface and Interface Analysis Using X-ray Spectromicroscopy Assisted by Measurement Informatics
