Surface and interface analysis of iron sulfides in aqueous media using X-ray photoelectron spectroscopy of fast-frozen dispersions

2021 ◽  
Vol 549 ◽  
pp. 149261
Author(s):  
Yuri Mikhlin ◽  
Alexander Romanchenko ◽  
Yevgeny Tomashevich
Keyword(s):  
Photoelectron Spectroscopy ◽  
Aqueous Media ◽  
Iron Sulfides ◽  
X Ray ◽  
Interface Analysis ◽  
Surface And Interface

scholarly journals A Sustainable Biomineralization Approach for the Synthesis of Highly Fluorescent Ultra-Small Pt Nanoclusters

Biosensors ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 128 ◽  
Author(s):  
Rajkamal Balu ◽  
Robert Knott ◽  
Christopher M. Elvin ◽  
Anita J. Hill ◽  
Namita R. Choudhury ◽  
...  
Keyword(s):  
Quantum Yield ◽  
Photoelectron Spectroscopy ◽  
Photophysical Properties ◽  
Conformational Dynamics ◽  
Aqueous Media ◽  
Intrinsically Disordered Protein ◽  
X Ray ◽  
Pt Nanoclusters ◽  
Intrinsically Disordered ◽  
Green Fluorescent

Herein we report the first example of a facile biomineralization process to produce ultra-small-sized highly fluorescent aqueous dispersions of platinum noble metal quantum clusters (Pt-NMQCs) using a multi-stimulus responsive, biomimetic intrinsically disordered protein (IDP), Rec1-resilin. We demonstrate that Rec1-resilin acts concurrently as the host, reducing agent, and stabilizer of the blue-green fluorescent Pt-NMQCs once they are being formed. The photophysical properties, quantum yield, and fluorescence lifetime measurements of the synthesized Pt-NMQCs were examined using UV-Vis and fluorescence spectroscopy. The oxidation state of the Pt-NMQCs was quantitatively analyzed using X-ray photoelectron spectroscopy. Both a small angle X-ray scattering technique and a modeling approach have been attempted to present a detailed understanding of the structure and conformational dynamics of Rec1-resilin as an IDP during the formation of the Pt-NMQCs. It has been demonstrated that the green fluorescent Pt-NMQCs exhibit a high quantum yield of ~7.0% and a lifetime of ~9.5 ns in aqueous media. The change in photoluminescence properties due to the inter-dot interactions between proximal dots and aggregation of the Pt-NMQCs by evaporation was also measured spectroscopically and discussed.

Characterization of Ti/TiN Films and SiO2/Ti Interfaces by Use of X-Ray Photoelectron Spectroscopy

1993 ◽  
Vol 318 ◽  
Author(s):  
Joffre Bernard ◽  
Ercan Adem ◽  
Seshadri Ramaswami
Keyword(s):  
Integrated Circuits ◽  
Photoelectron Spectroscopy ◽  
Ambient Air ◽  
Tin Films ◽  
X Ray ◽  
Surface And Interface ◽  
Surface Analysis Techniques ◽  
Contamination Levels ◽  
Reflective Coatings

ABSTRACTThe deposition and processing of thin films, such as barrier metals and anti-reflective coatings, can be enhanced using the information provided by various surface analysis techniques. We will show the application of x-ray photoelectron spectroscopy(XPS) to the production of Ti and TiN films suitable for use in ULSI CMOS integrated circuits. XPS can separate Ti and N photoelectron peaks and detect low (1.0-5.0 atomic%) contamination levels while providing surface and interface chemical state information. In this paper we will show that a) the effect of TiN deposition on subsequent Ti film quality from the same Ti target was determined to be minimal, b) the relation of anneal temperature to the extent of SiO2 reduction by Ti metal was characterized on SiO2/Ti/TiN structures for temperatures from 600°C to 800°C, and c) the absorption of O into TiN films from ambient air was detected and confirmed.

Study of aggregate samples with iron sulfides through micro X-ray fluorescence (μXRF) and X-ray photoelectron spectroscopy (XPS)

2013 ◽  
Vol 48 (5) ◽  
pp. 1285-1290 ◽  
Author(s):  
S. Chinchón-Payá ◽  
A. Aguado ◽  
F. Coloma ◽  
S. Chinchón
Keyword(s):  
Photoelectron Spectroscopy ◽  
Iron Sulfides ◽  
X Ray

Photo-Chemical Changes of Aluminium Films on Silicon

1988 ◽  
Vol 119 ◽  
Author(s):  
A. J. Kellock ◽  
J. S. Williams ◽  
G. L. Nyberg ◽  
J. Liesegang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Surface Oxidation ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Chemical Changes ◽  
X Ray ◽  
Surface And Interface ◽  
Photon Irradiation

AbstractX-ray Photoelectron Spectroscopy and Rutherford Backscattering Spectroscopy with channeling are employed to study surface and interface changes resulting from irradiation of thin Al films on Si-SiO2 substrates using < 6eV visible photons. Results indicati that surface oxidation and bonding rearrangements at the Al-SiO2-Si interface can take place at room temperature under photon bombardment. These changes are correlated with enhanced adhesion and modification of film etch properties which are also a result of photon irradiation.

Multi-Technique Characterization of WSix films

1994 ◽  
Vol 337 ◽  
Author(s):  
S.M. Baumann ◽  
C.J. Hitzman ◽  
I.C. Ivanov ◽  
AY. Craig ◽  
P.M. Lindley
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Barrier Properties ◽  
Oxide Thickness ◽  
Grain Structure ◽  
Elastic Recoil ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Surface And Interface

ABSTRACTWSix films are used extensively for contact, interconnect, and, in some cases, diffusion and Schottky barriers in semiconductor devices1. The electrical and barrier properties of these films are affected by a variety of factors, such as film stoichiometry, morphology, impurities, etc. This paper will address the capabilities and limitations of a variety of techniques which are frequently used to characterize WSix films. Techniques which were studied include: Dynamic and Static Secondary Ion Mass Spectrometry (SIMS), Rutherford Backscattering Spectrometry and Elastic Recoil Detection (RBS/ERD), Auger Electron Spectroscopy (AES), Field Emission Scanning Electron Microscopy (FE-SEM), Total Reflection X-ray Fluorescence (TXRF), Atomic Force Microscopy (AFM), and X-Ray Photoelectron Spectroscopy (XPS). Film characteristics which were studied included surface morphology; grain structure; film stoichiometry; surface and interface oxide thickness and composition; and surface, bulk, and interface impurity concentrations including metallic, atmospheric, and dopant impurities. Cross correlation between the techniques was performed whenever possible in order to compare the relative accuracy of the techniques as well.

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