Surface and Interface Analysis of Mg/sub x/Zn/sub 1-x/O cubic and hexagonal phases by X-Ray Photoelectron and Rutherford Back Scattering Spectroscopies

2006 ◽  
Author(s):  
S.S. Hullavarad ◽  
D.E. Pugel ◽  
S. Dhar ◽  
I. Takeuchi ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Rutherford Back Scattering ◽  
X Ray ◽  
Interface Analysis ◽  
Surface And Interface ◽  
Back Scattering

scholarly journals Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates

2013 ◽  
Vol 46 (4) ◽  
pp. 882-886 ◽  
Author(s):  
Kirill Shcherbachev ◽  
Vladimir Privezentsev ◽  
Vaclav Kulikauskas ◽  
Vladimir Zatekin ◽  
Vladimir Saraykin
Keyword(s):  
Surface Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Interaction ◽  
Structural Transformations ◽  
Rutherford Back Scattering ◽  
X Ray ◽  
Back Scattering ◽  
Heavily Doped ◽  
Zn Ions ◽  
Secondary Ion

A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatment. The shape of the SIMS profiles for Zn atoms correlates with the crystal structure of the damaged layer and depends on the presence of the following factors influencing the mobility of Zn atoms: (i) an amorphous/crystalline (a/c) interface, (ii) end-of-range defects, which are located slightly deeper than the a/c interface; (iii) a surface area enriched by Si vacancies; and (iv) the chemical interaction of Zn with Si atoms, which leads to the formation of Zn-containing phases in the surface layer.

DESIGN OF AN ULTRA COMPACT CYCLOTRON FOR PARTICLE INDUCED X-RAY EMISSION

1993 ◽  
Vol 03 (04) ◽  
pp. 329-333 ◽  
Author(s):  
S. WAKASA ◽  
K. FUKUDA ◽  
T. TAKAGI ◽  
N. NAKANISHI
Keyword(s):  
Alpha Particle ◽  
Particle Beams ◽  
Rutherford Back Scattering ◽  
Constant Energy ◽  
X Ray ◽  
Compact Cyclotron ◽  
Back Scattering

An ultra compact cyclotron was constructed for Particle Induced X-ray Emission (PIXE) and Rutherford Back Scattering (RBS) experiments. The cyclotron accelerates proton and alpha-particle beams to a constant energy of 3 MeV. The size of the magnet is 85 cm ×85 cm ×60 cm . Characteristics of the cyclotron are presented.

scholarly journals Nano-scale Surface and Interface Analysis Using X-ray Spectromicroscopy Assisted by Measurement Informatics

2021 ◽  
Vol 64 (8) ◽  
pp. 382-389
Author(s):  
Naoka NAGAMURA ◽  
Tarojiro MATSUMURA ◽  
Kenji NAGATA ◽  
Shotaro AKAHO ◽  
Yasunobu ANDO
Keyword(s):  
X Ray ◽  
Interface Analysis ◽  
Surface And Interface ◽  
Nano Scale ◽  
Scale Surface

Formation and Stability of NI(PT) Silicide on (100)SI and (111)SI

1999 ◽  
Vol 564 ◽  
Author(s):  
D. Mangelinck ◽  
J. Y. Dai ◽  
S. K. Lahiri ◽  
C. S. Ho ◽  
T. Osipowicz
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Scanning Electron Microscopy ◽  
X Ray Diffraction ◽  
Rutherford Back Scattering ◽  
Kinetics And Thermodynamics ◽  
X Ray ◽  
Back Scattering ◽  
Thermal Stability Of ◽  
Scanning Electron

AbstractThe effect of a small amount of Pt (5 at.%) on the thermal stability of NiSi film on (100)Si and (111 )Si has been investigated. Rutherford back scattering, Scanning Electron Microscopy, and X-ray diffraction have been used to study the formation, microstructure and orientation of the silicide. The addition of platinum results in increasing the disilicide nucleation temperature to 900°C and thus leads to a better stability of NiSi at high IC processing temperatures. The presence of Pt also induced a texture of the NiSi film both on (11 1)Si and (100)Si. The increase in thermal stability is explained in terms of nucleation controlled reaction concept and should open new possibilities for the use of NiSi in self aligned silicidation. The redistribution of Pt in the silicide is examined and explained in terms of kinetics and thermodynamics considerations. The addition of Pt also increases the temperature of agglomeration of NiSi.

COMPARATIVE STUDY OF IONIZED METAL PLASMA Ta, TaN AND MULTISTACKED Ta/TaN STRUCTURE AS DIFFUSION BARRIERS FOR Cu METALLIZATION

2001 ◽  
Vol 08 (05) ◽  
pp. 459-464 ◽  
Author(s):  
C. Y. LI ◽  
LEI HE ◽  
J. J. WU ◽  
Y. QIAN ◽  
L. T. KOH ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Rutherford Back Scattering ◽  
X Ray ◽  
Force Microscopy ◽  
Barrier Materials ◽  
Cu Metallization ◽  
Atomic Force ◽  
Metal Plasma ◽  
Back Scattering ◽  
And Diffusion

The properties of the ion-metal-plasma (IMP) deposited Ta, TaN and multistacked Ta/TaN between Cu and SiO 2 have been investigated in the Cu /barrier layer/ SiO 2/ Si structures using four-point probe, atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford back scattering (RBS), tunneling electron microscopy (TEM) and metal-pulse techniques. It was found that the multistacked Ta/TaN barrier shows the best metallurgical and thermal stability among three of them, and the superior stability is found to result mainly from the nanocrystalline microstructure rather than the density and grain size of the barrier materials. The microstructure, which contains nanocrystalline grain and amorphous-like matrix, can better retard the intermixing and diffusion of Cu, Ta, O and Si atoms, due likely to reduction of grain boundaries that are the main passway for the diffusion of these elements.

Surface and Interface Analysis of Thin-Film/Si(Substrate) Contacts by Sxes

1996 ◽  
Vol 448 ◽  
Author(s):  
C. Heck ◽  
M. Kusaka ◽  
M. Hirai ◽  
H. Nakamura ◽  
M. Iwami ◽  
...  
Keyword(s):  
Thin Film ◽  
Free Path ◽  
Energetic Electron ◽  
Mean Free Path ◽  
Si Substrate ◽  
X Ray ◽  
Interface Analysis ◽  
Surface And Interface ◽  
The Mean ◽  
Primary Electrons

AbstractA soft X-ray emission spectroscopy(SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a thin-film(e.g., Cr)/Si(substrate) contact system, where the energy of primary electrons, Ep , is less than 20keV. An interesting point of this method is that we can have a specific signal for an element to be used as a finger print, otherwise it is difficult. By using this e-beam excited SXES, we can study an interface buried deep in a rather thick overlayer, e.g., more than a hundred of nm, which is due to the fact that a mean free path of a soft X-ray or an X-ray production depth is much larger than the mean free path of an energetic electron in solids. Electronic structural study of silicides by SXES is also shown.

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