scholarly journals Surface processing of optical glasses with 34 fs pulses: ablation thresholds and crater shape

Author(s):  
Attila Andrásik ◽  
Roland Flender ◽  
Judit Budai ◽  
Tamás Szörényi ◽  
Béla Hopp
2014 ◽  
Vol 4 (1) ◽  
pp. 69-78 ◽  
Author(s):  
Toshihiko Yoshimura ◽  
Kentaro Shiraishi ◽  
Tatsuhiro Takeshima ◽  
Motonori Komura ◽  
Tomokazu Iyoda

Author(s):  
Tomomi Omura ◽  
Shinta Takizawa ◽  
Hiroaki Katsuragi

Abstract For a fundamental understanding of terrain relaxation occurring on sloped surfaces of terrestrial bodies, we analyze the crater shape produced by an impact on an inclined granular (dry-sand) layer. Owing to asymmetric ejecta deposition followed by landsliding, the slope of the impacted inclined surface can be relaxed. Using the experimental results of a solid projectile impact on an inclined dry-sand layer, we measure the distance of centroid migration induced by asymmetric cratering. We find that the centroid migration distance xmig normalized to the crater minor-axis diameter Dcy can be expressed as a function of the initial inclination of the target tan θ, the effective friction coefficient μ, and two parameters K and c that characterize the asymmetric ejecta deposition and oblique impact effect: xmig/Dcy = Ktan θ/(1 − (tan θ/μ)2) + c, where K = 0.6, μ = 0.8, and c = −0.1 to 0.3. This result is consistent with a previous study that considered the effect of asymmetric ejecta deposition. The obtained results provide fundamental information for analyzing the degradation of sloped terrain on planetary surfaces, such as crater-shape degradation due to the accumulation of micro-impacts.


MRS Bulletin ◽  
1992 ◽  
Vol 17 (6) ◽  
pp. 52-57 ◽  
Author(s):  
S.T. Picraux ◽  
E. Chason ◽  
T.M. Mayer

Why are low-energy ions relevant to the surface processing of electronic materials? The answer lies in the overriding trend of miniaturization in microelectronics. The achievement of these feats in ultrasmall architecture has required surface processing capabilities that allow layer addition and removal with incredible precision. The resulting benefits of greater capacity and speed at a plummeting cost per function are near legendary.The ability of low-energy ions to enhance the precision of surface etching, cleaning, and deposition/growth processes (Figure 1) provides one basis for the interest in ion-assisted processes. Low-energy ions are used, for example, to enhance the sharpness of side walls in plasma etching and to improve step coverage by metal layers in sputter deposition. Emerging optoelectronic applications such as forming ridges for wave-guides and ultrasmooth vertical surfaces for lasers further extend piesent requirements, and low-energy ions again provide one tool to help in this area of ultraprecise materials control. Trends associated with the decreased feature size include the movement from wet chemical processing to dry processing, the continuing need for reductions in defect densities, and the drive toward reduced temperatures and times in process steps.How do the above trends focus interest on studies of low-energy ion-assisted processes? In current applications, these trends are driving the need for increased atomic-level understanding of the ion-enhancement mechanisms, for example, in reactive ion etching to minimize defect production and enhance surface chemical reactions.


2016 ◽  
Author(s):  
Takamichi Hirasawa ◽  
Michihiro Yamamoto

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