Fabrication of one- and two-dimensional photonic crystals in phosphate glass substrates using ultraviolet laser holography and selective chemical etching

2009 ◽  
Vol 6 (1/2) ◽  
pp. 99
Author(s):  
Stavros Pissadakis ◽  
Christos Pappas
Keyword(s):  
Photonic Crystals ◽  
Phosphate Glass ◽  
Chemical Etching ◽  
Two Dimensional ◽  
Ultraviolet Laser ◽  
Glass Substrates ◽  
Selective Chemical ◽  
Laser Holography ◽  
Selective Chemical Etching

Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

2005 ◽  
Vol 152 (4) ◽  
pp. G277 ◽  
Author(s):  
S. Scalese ◽  
A. La Magna ◽  
M. Italia ◽  
S. Pannitteri ◽  
V. Privitera ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Quantitative Measurements ◽  
Selective Chemical ◽  
Selective Chemical Etching

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

1997 ◽  
Vol 82 (11) ◽  
pp. 5811-5815 ◽  
Author(s):  
Suneeta S. Neogi ◽  
David Venables ◽  
Zhiyong Ma ◽  
Dennis M. Maher ◽  
Mitchell Taylor ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

1997 ◽  
Vol 490 ◽  
Author(s):  
Kwang-Ki Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee ◽  
Hyunsang Hwang ◽  
Yong Sun Sohn
Keyword(s):  
Atomic Force Microscope ◽  
Microscope Study ◽  
Chemical Etching ◽  
Calculated Data ◽  
Two Dimensional ◽  
Atomic Force ◽  
Selective Chemical ◽  
Selective Chemical Etching

ABSTRACTSelective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Scaling properties of a Si surface patterned by selective chemical etching

2004 ◽  
Vol 36 (1-3) ◽  
pp. 353-358 ◽  
Author(s):  
G. Wisz ◽  
T.Ya. Gorbach ◽  
P.S. Smertenko ◽  
A. Blahut ◽  
K. Zembrowska ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Scaling Properties ◽  
Selective Chemical ◽  
Selective Chemical Etching
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