Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching
Keyword(s):
ABSTRACTSelective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.
2005 ◽
Vol 152
(4)
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pp. G277
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1996 ◽
Vol 14
(1)
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pp. 414
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2004 ◽
Vol 36
(1-3)
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pp. 353-358
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1993 ◽
Vol 71
(20)
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pp. 3303-3306
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2014 ◽