Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

1997 ◽  
Vol 82 (11) ◽  
pp. 5811-5815 ◽  
Author(s):  
Suneeta S. Neogi ◽  
David Venables ◽  
Zhiyong Ma ◽  
Dennis M. Maher ◽  
Mitchell Taylor ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

2005 ◽  
Vol 152 (4) ◽  
pp. G277 ◽  
Author(s):  
S. Scalese ◽  
A. La Magna ◽  
M. Italia ◽  
S. Pannitteri ◽  
V. Privitera ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Quantitative Measurements ◽  
Selective Chemical ◽  
Selective Chemical Etching

Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

1997 ◽  
Vol 490 ◽  
Author(s):  
Kwang-Ki Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee ◽  
Hyunsang Hwang ◽  
Yong Sun Sohn
Keyword(s):  
Atomic Force Microscope ◽  
Microscope Study ◽  
Chemical Etching ◽  
Calculated Data ◽  
Two Dimensional ◽  
Atomic Force ◽  
Selective Chemical ◽  
Selective Chemical Etching

ABSTRACTSelective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

scholarly journals Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching aftercmd="newline" Irradiation of Femtosecond Laser Pulses

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Shigeki Matsuo ◽  
Kensuke Tokumi ◽  
Takuro Tomita ◽  
Shuichi Hashimoto
Keyword(s):  
High Temperature ◽  
Femtosecond Laser ◽  
Chemical Etching ◽  
Room Temperature ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

Scaling properties of a Si surface patterned by selective chemical etching

2004 ◽  
Vol 36 (1-3) ◽  
pp. 353-358 ◽  
Author(s):  
G. Wisz ◽  
T.Ya. Gorbach ◽  
P.S. Smertenko ◽  
A. Blahut ◽  
K. Zembrowska ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Scaling Properties ◽  
Selective Chemical ◽  
Selective Chemical Etching

Fabrication of InP/SiO2/Si Substrate using Ion-Cutting Process and Selective Chemical Etching

2019 ◽  
Vol 6 (1) ◽  
pp. 99-103
Author(s):  
Peng Chen ◽  
Dapeng Xu ◽  
Luke Mawst ◽  
Kimmo Henttinen ◽  
Tommi Suni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Cutting Process ◽  
Si Substrate ◽  
Selective Chemical ◽  
Selective Chemical Etching
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