Two-dimensional junction profiling by selective chemical etching: Applications to electron device characterization

1996 ◽  
Vol 14 (1) ◽  
pp. 414 ◽  
Author(s):  
C. Spinella
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Device Characterization ◽  
Electron Device ◽  
Selective Chemical ◽  
Selective Chemical Etching

Quantitative Measurements of Two-Dimensional Ultrashallow B Profiles in Si by Selective Chemical Etching

2005 ◽  
Vol 152 (4) ◽  
pp. G277 ◽  
Author(s):  
S. Scalese ◽  
A. La Magna ◽  
M. Italia ◽  
S. Pannitteri ◽  
V. Privitera ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Quantitative Measurements ◽  
Selective Chemical ◽  
Selective Chemical Etching

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

1997 ◽  
Vol 82 (11) ◽  
pp. 5811-5815 ◽  
Author(s):  
Suneeta S. Neogi ◽  
David Venables ◽  
Zhiyong Ma ◽  
Dennis M. Maher ◽  
Mitchell Taylor ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Two Dimensional ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

Atomie Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

1997 ◽  
Vol 490 ◽  
Author(s):  
Kwang-Ki Choi ◽  
Tae-Yeon Seong ◽  
Seonghoon Lee ◽  
Hyunsang Hwang ◽  
Yong Sun Sohn
Keyword(s):  
Atomic Force Microscope ◽  
Microscope Study ◽  
Chemical Etching ◽  
Calculated Data ◽  
Two Dimensional ◽  
Atomic Force ◽  
Selective Chemical ◽  
Selective Chemical Etching

ABSTRACTSelective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.

Scaling properties of a Si surface patterned by selective chemical etching

2004 ◽  
Vol 36 (1-3) ◽  
pp. 353-358 ◽  
Author(s):  
G. Wisz ◽  
T.Ya. Gorbach ◽  
P.S. Smertenko ◽  
A. Blahut ◽  
K. Zembrowska ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Scaling Properties ◽  
Selective Chemical ◽  
Selective Chemical Etching

Fabrication of InP/SiO2/Si Substrate using Ion-Cutting Process and Selective Chemical Etching

2019 ◽  
Vol 6 (1) ◽  
pp. 99-103
Author(s):  
Peng Chen ◽  
Dapeng Xu ◽  
Luke Mawst ◽  
Kimmo Henttinen ◽  
Tommi Suni ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Cutting Process ◽  
Si Substrate ◽  
Selective Chemical ◽  
Selective Chemical Etching

scholarly journals Understanding the Interdependence of Penetration Depth and Deformation on Nanoindentation of Nanoporous Silver

Metals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1346
Author(s):  
Yannick Champion ◽  
Mathilde Laurent-Brocq ◽  
Pierre Lhuissier ◽  
Frédéric Charlot ◽  
Alberto Moreira Jorge Junior ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Density Variation ◽  
Selective Chemical ◽  
Indent Depth ◽  
Selective Chemical Etching ◽  
Scanning Electron

A silver-based nanoporous material was produced by dealloying (selective chemical etching) of an Ag38.75Cu38.75Si22.5 crystalline alloy. Composed of connected ligaments, this material was imaged using a scanning electron microscope (SEM) and focused ion-beam (FIB) scanning electron microscope tomography. Its mechanical behavior was evaluated using nanoindentation and found to be heterogeneous, with density variation over a length scale of a few tens of nanometers, similar to the indent size. This technique proved relevant to the investigation of a material’s mechanical strength, as well as to how its behavior related to the material’s microstructure. The hardness is recorded as a function of the indent depth and a phenomenological description based on strain gradient and densification kinetic was proposed to describe the resultant depth dependence.

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