Basic Process Engineering Control

The paper presents a methodology for the design of the manufacturing cells, covering all the necessary steps, from the analysis of the customers’ needs, to part families for group technologies, process engineering, control procedures, production rate, production planning (push or pull workflow), supply in the manufacturing cell, workcell configuration, work standardisation. The necessary tools through each stage are presented. Also, there are presented links to major company systems. For each design stage, deliverables are specified. this design approach is not linear. At each stage it is possible (and indicated) to go back and analyse the previously established parameters. The methodology is a complex one, and in a wider space the detailed parameters will be presented in extenso.

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Investigation of irradiation-induced nucleation processes in silicon and germanium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137495 ◽

1995 ◽

Vol 53 ◽

pp. 224-225

Author(s):

Harry A. Atwater ◽

C.M. Yang ◽

K.V. Shcheglov

Keyword(s):

Room Temperature ◽

Crystal Size ◽

Initial Distribution ◽

Engineering Control ◽

Size Evolution ◽

Silicon And Germanium ◽

Ge Quantum Dot ◽

And Control ◽

Germanium Quantum Dots ◽

Kinetics Of

Studies of the initial stages of nucleation of silicon and germanium have yielded insights that point the way to achievement of engineering control over crystal size evolution at the nanometer scale. In addition to their importance in understanding fundamental issues in nucleation, these studies are relevant to efforts to (i) control the size distributions of silicon and germanium “quantum dots𠇍, which will in turn enable control of the optical properties of these materials, (ii) and control the kinetics of crystallization of amorphous silicon and germanium films on amorphous insulating substrates so as to, e.g., produce crystalline grains of essentially arbitrary size.Ge quantum dot nanocrystals with average sizes between 2 nm and 9 nm were formed by room temperature ion implantation into SiO2, followed by precipitation during thermal anneals at temperatures between 30°C and 1200°C[1]. Surprisingly, it was found that Ge nanocrystal nucleation occurs at room temperature as shown in Fig. 1, and that subsequent microstructural evolution occurred via coarsening of the initial distribution.

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