Displacement cascade evolution in tungsten with pre-existing helium and hydrogen clusters: a molecular dynamics study

Author(s):  
Mohammad Abu-Shams ◽  
Jeffery Moran ◽  
Ishraq Shabib

Abstract The effects of radiation damage on bcc tungsten with preexisting helium and hydrogen clusters have been investigated in a high-energy environment via a comprehensive molecular dynamics simulation study. This research determines the interactions of displacement cascades with helium and hydrogen clusters integrated into a tungsten crystal generating point defect statistics. Helium or hydrogen clusters of atoms~0.1% of the total number of atoms have been randomly distributed within the simulation model and primary knock-on-atom (PKA) energies of 2.5, 5, 7.5 and 10 keV have been used to generate displacement cascades. The simulations quantify the extent of radiation damage during a simulated irradiation cycle using the Wigner-Seitz point defect identification technique. The generated point defects in crystals with and without pre-existing helium/hydrogen defects exhibit a power relationship with applied PKA energy. The point defects are classified by their atom type, defect type, and distribution within the irradiated model. The presence of pre-existing helium and hydrogen clusters significantly increases the defects (5 - 15 times versus pure tungsten models). The vacancy composition is primarily tungsten (e. g., ~70% at 2.5 keV) in models with pre-existing helium, but the interstitials are primarily He (e. g., ~89% at 10 keV). On the other hand, models with pre-existing hydrogen have a vacancy composition that is primarily tungsten (more than 90% irrespective of PKA energy), and the interstitial composition is more balanced between tungsten (average 46%) and hydrogen (average 54%) interstitials across the PKA range. The distribution of the atoms reveals that the tungsten point defects prefer to reside close to the position of cascade initiation, but helium or hydrogen defects reside close to the positions where clusters are built.

2014 ◽  
Vol 66 (1) ◽  
pp. 112-117 ◽  
Author(s):  
Xiaodan Yang ◽  
Huiqiu Deng ◽  
Nengwen Hu ◽  
Shifang Xiao ◽  
Cuilan Ren ◽  
...  

1994 ◽  
Vol 373 ◽  
Author(s):  
Roger E. Stoller

AbstractA series of high-energy, up to 20 keV, displacement cascades in iron have been investigated for times up to 200 ps at 100 K using the method of molecular dynamics simulation. Thesimulations were carried out using the MOLDY code and a modified version of the many-bodyinteratomic potential developed by Finnis and Sinclair. The paper focuses on those results obtained at the highest energies, 10 and 20 keV. The results indicate that the fraction of the Frenkel pairs surviving in-cascade recombination remains fairly high in iron and that the fraction of the surviving point defects that cluster is lower than in materials such as copper. In particular, vacancy clustering appears to be inhibited in iron. Some of the interstitial clusters were observed to exhibit an unexpectedly complex, three-dimensional morphology. The observations are discussed in terms of their relevance to microstructural evolution and mechanical property changes in irradiated iron-based alloys.


1998 ◽  
Vol 540 ◽  
Author(s):  
J.M. Perlado ◽  
L. Malerba ◽  
T. Diaz De La Rubia

AbstractMolecular Dynamics (MD) simulations of neutron damage in β-SiC have been performed using a modified version of the Tersoff potential. The Threshold Displacement Energy (TDE) for Si and C atoms at 300 K has been determined along directions [001], [110], [111] and [ 1 1 1 ]. The existence of recombination barriers, which allow the formation of metastable, temperature-sensitive defects even below the threshold, has been observed. Displacement cascades produced by both C- and Si-recoils of energies spanning from 0.5 keV up to, respectively, 5 keV and 8 keV have also been simulated at 300 K and 1300 K. Their analysis, together with the analysis of damage accumulation (∼3.4×10-3 DPA) at 1300 K, reveals that the two sub-lattices exhibit opposite responses to irradiation: whereas only a little damage is produced on the “ductile” Si sub-lattice, many point-defects accumulate on the much more “fragile” C sub-lattice. A preliminary study of the nature and clustering tendency of these defects is performed. The possibility of disorder-induced amorphization is considered and the preliminary result is that no amorphization takes place at the dose and temperature simulated.


2003 ◽  
Vol 792 ◽  
Author(s):  
Wei-Kan Chu ◽  
Lin Shao ◽  
Jiarui Liu

ABSTRACTAnomalous diffusion of boron during annealing is a detriment on the fabrication of ultrashallow junction required by the next generation Si devices. This has driven the need to develop new doping methods. In the point defect engineering approach, high-energy ion bombardments inject vacancies near the surface region and create excessive interstitials near the end of projected range of incident ions. Such manipulation of point defects can retard boron diffusion and enhance activation of boron. We will review the current understanding of boron diffusion and our recent activities in point defect engineering.


1992 ◽  
Vol 278 ◽  
Author(s):  
A.M. Mazzone

AbstractThis work presents a molecular dynamics simulation method designed to describe the processes of electron and lattice relaxation taking place in typical cascade volumes formed by high-energy implants. The simulation method is based on classical mechanics and includes the motions of electrons and nuclei. The results are in agreement with experiments.


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