scholarly journals Broad band infrared modulation using spintronic-plasmonic metasurfaces

Nanophotonics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1847-1854 ◽  
Author(s):  
Gaspar Armelles ◽  
Luca Bergamini ◽  
Nerea Zabala ◽  
María Ujué González ◽  
Fernando García ◽  
...  

AbstractWe present magnetic field induced modulation of the optical response of slit plasmonic metasurfaces fabricated out of giant magnetoresistance/spintronic materials in the 2–17 μm spectral range of the spectrum. The modulation of the slit plasmonic modes is due to the modification of the electrical resistivity (and, in turn, of the optical constants) induced by the application of an external magnetic field. This modulation is found to continuously increase both with the slit concentration and with the slit resonance wavelength, with a prospective further increase for wavelengths of up to 60–80 μm. The direct fabrication and implementation of the modulation setup opens a competitive route for the development of active plasmonic metasurfaces in a wide spectral range.

2015 ◽  
Vol 33 (4) ◽  
pp. 835-840
Author(s):  
J.I. Uba ◽  
A.J. Ekpunobi ◽  
P.I. Ekwo

AbstractIt has not been possible to transform resistivity models in terms of magnetic field in order to account for variation of giant magnetoresistance (GMR) with external magnetic field, which would have led to determination of material properties. This problem is approached mathematically via variation calculus to arrive at an exponential function that fits observed GMR values. Using this model in free electron approximation, the mean Fermi vector, susceptibility and total density of states of a number of metallic multilayers are determined from their reported GMR values. Susceptibility is found to depend on interface roughness and antiferromagnetic (AF) coupling; thus, it gives qualitative measure of interface quality and AF coupling. Comparison of susceptibilities and GMRs of electrodeposited and ion beam sputtered Co/Cu structures shows that a rough interface suppresses GMR in the former but enhances it in the latter.


Doklady BGUIR ◽  
2021 ◽  
Vol 19 (2) ◽  
pp. 5-13
Author(s):  
V. M. Fedosyuk

 The results of study of the giant magnetoresistance coefficient (GMR) in multilayer micro- and nanowires based on successively alternating ferromagnetic (Co, CoNi and NiFe) and diamagnetic (Cu) layers are presented in the paper. The samples were obtained by electrochemical deposition into the matrix pores. Aluminum oxide was used as matrices. To establish the influence of the aspect ratio, matrices of two types were used: with a pore diameter of 8 µm and 170–200 nm and a variable thickness from 10 to 60 µm. Investigations of the GMR coefficient were carried out by measuring the current-voltage characteristics in external magnetic fields up to 130 mT. When using type I matrices (pore diameter 8 μm), a positive GMR coefficient (an increase in electrical resistivity in an external magnetic field) was noted, while when using type II matrices (pore diameter 170–200 nm), a negative GMR coefficient was established (a decrease in electrical resistance in an external magnetic field). This is due to the enhancement of the interactions of spin-polarized electrons in the magnetic layers through the copper layer through the RKKY exchange with an increase in the aspect ratio. A significant effect of the composition of the ferromagnetic layer (Co, CoNi, and NiFe) on the value  of the GMR coefficient is noted. The maximum value of the negative GMR coefficient (up to –27.5 %) was established for the CoNi-based nanowire system. The use of multilayer micro- and nanowires, electrolytically deposited in a matrix of aluminum oxide with the ability to control the GMR coefficients, opens up perspective use of these objects as sensitive elements (sensors) of a constant magnetic field, as well as devices for storing magnetic information with a vertical principle. 


2012 ◽  
Vol 194 ◽  
pp. 40-44 ◽  
Author(s):  
Jan Fikáček ◽  
Jiří Prchal ◽  
Jan Prokleška ◽  
Ivana Císařová ◽  
Vladimír Sechovský

We have synthesized CeRuSn single crystals and performed measurements of electrical resistivity and specific heat. At high temperatures, abrupt transitions were observed at 290 and 225 K in electrical resistivity during cooling. Both transitions are connected with a large temperature hysteresis. Low temperature properties are dominated by an antiferromagnetic transition at 2.9 K, which involves only half of cerium ions, leaving the rest of them non-magnetic. A significant magnetocrystalline anizotropy was revealed by application of external magnetic field.


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