Intrinsic Optical Absorption in Germanium

1964 ◽  
Vol 19 (5) ◽  
pp. 548-552
Author(s):  
Günther Harbeke

The absorption constant of germanium beyond the first direct absorption edge has been determined up to energies of 2.5 eV by transmission measurements on very thin samples prepared from bulk single crystals. The results are discussed in terms of recent band structure calculations and previous reflection measurements. At low temperatures the observed structure gives evidence for exciton formation connected with direct transitions at a saddle point in the energy difference between conduction and valence bands.

1991 ◽  
Vol 6 (7) ◽  
pp. 1512-1517 ◽  
Author(s):  
A.E. Carlsson ◽  
P.J. Meschter

The relative energies of the related C11b, C40, and C54 crystal structures of group IV–VII transition-metal disilicides are obtained by ab initio self-consistent band-structure calculations using the augmented-spherical-wave (ASW) method. The structural energy differences among these three structures correlate strongly with d-band filling, with C40 being stabilized relative to C54 and C11b relative to C40 as the transition-metal d-electron count increases. The C40/C11b energy difference is <0.05 eV/atom only for CrSi2 and MoSi2. Relative C11b/C40/C54 energies are similar in magnitude to those obtained in previous studies of L12/D022/D023 competition in transition-metal aluminides.1,2 Calculations of the C49/C54 energetic competition are inaccurate; the differences in atomic coordination in these two structures are probably too large for the computational method to handle accurately. The total-energy results are interpreted by a detailed analysis of the electronic density-of-states (DOS) distributions. The stable structures do not correlate as strongly with DOS effects in the vicinity of the Fermi level as in the aluminides.


2021 ◽  
Vol 103 (8) ◽  
Author(s):  
M. Naumann ◽  
P. Mokhtari ◽  
Z. Medvecka ◽  
F. Arnold ◽  
M. Pillaca ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1535
Author(s):  
Shiu-Ming Huang ◽  
Jai-Lung Hung ◽  
Mitch Chou ◽  
Chi-Yang Chen ◽  
Fang-Chen Liu ◽  
...  

Broadband photosensors have been widely studied in various kinds of materials. Experimental results have revealed strong wavelength-dependent photoresponses in all previous reports. This limits the potential application of broadband photosensors. Therefore, finding a wavelength-insensitive photosensor is imperative in this application. Photocurrent measurements were performed in Sb2Te3 flakes at various wavelengths ranging from visible to near IR light. The measured photocurrent change was insensitive to wavelengths from 300 to 1000 nm. The observed wavelength response deviation was lower than that in all previous reports. Our results show that the corresponding energies of these photocurrent peaks are consistent with the energy difference of the density of state peaks between conduction and valence bands. This suggests that the observed photocurrent originates from these band structure peak transitions under light illumination. Contrary to the most common explanation that observed broadband photocurrent carrier is mainly from the surface state in low-dimensional materials, our experimental result suggests that bulk state band structure is the main source of the observed photocurrent and dominates the broadband photocurrent.


2008 ◽  
Vol 372 (31) ◽  
pp. 5224-5228 ◽  
Author(s):  
Renlong Zhou ◽  
Xuewen Wang ◽  
Bingju Zhou ◽  
Yongyi Gao ◽  
Xiaojuan Liu ◽  
...  

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