High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm
Keyword(s):
P Type
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The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.
2007 ◽
Vol 19
(21)
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pp. 216206
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Keyword(s):
2019 ◽
Vol 6
(10)
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pp. 105090
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2009 ◽
Vol 404
(23-24)
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pp. 4561-4564
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2017 ◽
Vol 29
(21)
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pp. 1848-1851
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2009 ◽
Vol 404
(23-24)
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pp. 4561-4564
1972 ◽
Vol 10
(1)
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pp. 149-151
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