scholarly journals High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Author(s):  
M. S. Kukurudziak ◽  
O. P. Andreeva ◽  
V. M. Lipka

The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task were established and worked out іn the course of research.

2020 ◽  
Vol 2 (4) ◽  
pp. 906-912
Author(s):  
Diyuan Zheng ◽  
Xinyuan Dong ◽  
Jing Lu ◽  
Anhua Dong ◽  
Yiru Niu ◽  
...  

2019 ◽  
Vol 6 (10) ◽  
pp. 105090 ◽  
Author(s):  
Chee Leong Tan ◽  
Heming Wei ◽  
Tamil Many K Thandavam ◽  
Rizal Ramli ◽  
Minsu Park ◽  
...  

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4561-4564 ◽  
Author(s):  
L.F. Makarenko ◽  
S.B. Lastovski ◽  
F.P. Korshunov ◽  
L.I. Murin ◽  
M. Moll

2017 ◽  
Vol 29 (21) ◽  
pp. 1848-1851 ◽  
Author(s):  
Jieqiong Hu ◽  
Qian Zhang ◽  
Peiqi Zhou ◽  
Chunlian Mei ◽  
Xu Huang ◽  
...  

2020 ◽  
Vol 1697 ◽  
pp. 012181
Author(s):  
N V Bazlov ◽  
A M Danishevskii ◽  
A V Derbin ◽  
I S Drachnev ◽  
I M Kotina ◽  
...  

1996 ◽  
Vol 153 (2) ◽  
pp. 473-480
Author(s):  
M. Yildirim ◽  
H. Efeo??lu ◽  
B. Abay ◽  
Y. K. Yo??urtçu

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4561-4564
Author(s):  
L.F. Makarenko ◽  
S.B. Lastovski ◽  
F.P. Korshunov ◽  
L.I. Murin ◽  
M. Moll

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