External Magnetic Field Effect on the Reaction of H2with O2on Metal Oxide Surfaces*

1992 ◽  
Vol 1 (Part_2) ◽  
pp. 309-319
Author(s):  
Hisao Ohnishi ◽  
Hirokazu Sasaki ◽  
Msamichi Ippommatsu
Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.


1976 ◽  
Vol 41 (2) ◽  
pp. 267-269 ◽  
Author(s):  
Y. Tanimoto ◽  
H. Hayashi ◽  
S. Nagakura ◽  
H. Sakuragi ◽  
K. Tokumaru

1981 ◽  
Vol 24-25 ◽  
pp. 763-766 ◽  
Author(s):  
J. Nakamura ◽  
K. Hashimoto ◽  
S. Nagakura

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