Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

Download Full-text

Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c051 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C051 ◽

Cited By ~ 5

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Transient Behavior ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Complementary Metal Oxide Semiconductor Field Effect Transistors

Encyclopedia of Materials: Science and Technology ◽

10.1016/b0-08-043152-6/00251-5 ◽

2001 ◽

pp. 1343-1350

Author(s):

S.K. Kurinec

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Impact of Dynamic Stress on Reliability of Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with SiON Gate Dielectric Operating in a Complementary Metal–Oxide–Semiconductor Inverter at Elevated Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.02bc13 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC13

Author(s):

Nam-Hyun Lee ◽

Hyung-wook Kim ◽

Bongkoo Kang

Keyword(s):

Elevated Temperature ◽

Metal Oxide ◽

Field Effect ◽

Dynamic Stress ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa6910 ◽

2017 ◽

Vol 32 (7) ◽

pp. 075001 ◽

Cited By ~ 6

Author(s):

Zuo Li ◽

Muhammad Khaled Husain ◽

Hiroyuki Yoshimoto ◽

Kazuki Tani ◽

Yoshitaka Sasago ◽

...

Keyword(s):

Metal Oxide ◽

Low Temperatures ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Carrier Trapping ◽

Single Carrier

Download Full-text

Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

Download Full-text

Effect of magnetic field on random telegraph noise in the source current of p-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1596381 ◽

2003 ◽

Vol 83 (4) ◽

pp. 710-712 ◽

Cited By ~ 3

Author(s):

Filipp A. Baron ◽

Yaohui Zhang ◽

Mingqiang Bao ◽

Ruigang Li ◽

Jinmin Li ◽

...

Keyword(s):

Magnetic Field ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Source Current

Download Full-text

Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications

Analytical Chemistry ◽

10.1021/acs.analchem.5b02604 ◽

2015 ◽

Vol 87 (19) ◽

pp. 9982-9990 ◽

Cited By ~ 24

Author(s):

Paolo Livi ◽

Moria Kwiat ◽

Amir Shadmani ◽

Alexander Pevzner ◽

Giulio Navarra ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Monolithic Integration ◽

Oxide Semiconductor ◽

Sensor Applications ◽

Semiconductor Chip

Download Full-text

Design of high speed Si/SiGe heterojunction complementary metal–oxide–semiconductor field effect transistors with reduced short-channel effects

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1474422 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1030-1033 ◽

Cited By ~ 1

Author(s):

P. W. Li ◽

W. M. Liao

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

Download Full-text

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c056 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C056

Author(s):

Ji-Woon Yang ◽

Chang Seo Park ◽

Casey E. Smith ◽

Hemant Adhikari ◽

Jeff Huang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate

Download Full-text

Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

Micromachines ◽

10.3390/mi12111303 ◽

2021 ◽

Vol 12 (11) ◽

pp. 1303

Author(s):

Hoontaek Lee ◽

Junsoo Kim ◽

Kumjae Shin ◽

Wonkyu Moon

Keyword(s):

Signal Processing ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cmos Process ◽

Effect Transistor

We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The - characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.

Download Full-text