Synthesis and Characterisation of Indium Tin Oxide Thin Films for Dye-Sensitised Solar Cells using Natural Fruit Extracts

2021 ◽  
Vol 18 (4) ◽  
Author(s):  
M.S. Ramyashree ◽  
K. Kumar ◽  
S. Shanmuga Priya ◽  
K. Sudhakar
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Visible Region ◽  
Spherical Particles ◽  
Nanocrystalline Phase ◽  
Vis Spectroscopy ◽  
Ito Films

The study focuses on the application of natural fruit extract of blackberry in dye-sensitised solar cells (DSSC) as a photosensitiser. The widespread availability of the fruits and juices, high concentration of anthocyanins in them ease of extraction of anthocyanin dyes from these commonly available fruits, enable them as a novel and inexpensive candidates for solar cell fabrication. Anthocyanins are naturally occurring biodegradable and non-toxic compounds that can be extracted with minimal environmental impact and provide environmentally benign alternatives for manufacturing dyes in DSSC synthesis. Indium tin oxide (ITO) thin films are synthesised using sol-gel and spin-coating techniques. ITO characteristics are determined by x-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transforms infrared spectra (FTIR) measurements. To find the transmittance percentage in the visible region of thin films, atomic force microscope (AFM) and UV-Vis spectroscopy analyses were done. The nanocrystalline phase of the synthesised ITO films was confirmed through XRD. SEM was used to analyse the morphology of the synthesised ITO films. Cubic, columnar (edge length ~ 35-45 nm) and rod-shaped (~110 x 14) particles were observed. Narrow size distribution was observed for spherical particles in the range of ~13-15 nm. The FTIR analysis revealed the presence of carboxyl and hydroxide functional groups. The AFM analysis revealed the uniform spread of the synthesised dye, while the visible region absorbance and transmittance of the synthesised ITO films were confirmed through UV-vis spectroscopy. The thin films showed 83-86% of average transmittance. Finally, we fabricated a dye-sensitised solar cell with desired properties. The characterisation results confirmed that the synthesised material could be used in the DSSC application.

scholarly journals Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Solar Cells ◽  
Indium Tin Oxide ◽  
Copper Indium Gallium Diselenide ◽  
Glass Substrates ◽  
Ito Film ◽  
Ito Thin Films ◽  
Cigs Solar Cells ◽  
Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

New Approaches to Chemical Bath Deposition of Chalcogenides

1999 ◽  
Vol 606 ◽  
Author(s):  
Paul O’brien ◽  
Markus R. Heinrich ◽  
David J. Otway ◽  
Odile Robbe ◽  
Alexander Bayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Chemical Bath Deposition ◽  
Glass Substrates ◽  
Heated Substrate ◽  
New Approaches ◽  
Vis Spectroscopy ◽  
Optoelectronic Applications ◽  
Cds Films

AbstractWe have been studying new approaches to conventional Chemical Bath Deposition (CBD) of chalcogenide containing materials, using continuous circulation and replenishment of CBD solution over a heated substrate. Crystalline thin films produced by this method offer potential for use in solar cell devices or other optoelectronic applications. Films of CdS, ZnS and the ternary material CdxZn1−xS have been deposited on TO-glass substrates. In this paper we demonstrate our approach for the deposition of CdS films. These have been characterized by XPS, SEM, XRD and UV/vis spectroscopy and shown to be good quality. The films have been used to fabricate Au/CdTe/CdS/TO-glass solar cells of efficiency 10.1% under AMl.5 illumination.

Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

2016 ◽  
Vol 610 ◽  
pp. 35-41 ◽  
Author(s):  
Alexei Simashkevich ◽  
Dormidont Serban ◽  
Leonid Bruc ◽  
Nicolai Curmei ◽  
Volker Hinrichs ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Vapor Phase ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
Silicon Based

Studies on Nanostructure ITO Thin Films on Silicon Solar Cells

2013 ◽  
Vol 678 ◽  
pp. 365-368
Author(s):  
Rangasamy Balasundraprabhu ◽  
E.V. Monakhov ◽  
N. Muthukumarasamy ◽  
B.G. Svensson
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Silicon Solar Cells ◽  
Shunt Resistance ◽  
Cell Parameters ◽  
Ito Film ◽  
Ito Thin Films ◽  
Ito Films

Nanostructure ITO thin films have been deposited on well cleaned glass and silicon substrates using dc magnetron sputtering technique. The ITO films are post annealed in air using a normal heater setup in the temperature range 100 - 400 °C. The ITO film annealed at 300°C exhibited optimum transparency and resistivity values for device applications. The thickness of the ITO thin films is determined using DEKTAK stylus profilometer. The sheet resistance and resistivity of the ITO films were determined using four probe technique. Finally, the optimized nanostructure ITO layers are incorporated on silicon solar cells and the efficiency of the solar cell are found to be in the range 12-14%. Other solar cell parameters such as fill factor(FF), open circuit voltage(Voc),Short circuit current(Isc), series resistance(Rs) and shunt resistance(Rsh) have been determined. The effect of ITO film thickness on silicon solar cells is also observed.

Preparation of indium tin oxide thin films without external heating for application in solar cells

2008 ◽  
Vol 354 (52-54) ◽  
pp. 5480-5484 ◽  
Author(s):  
J.B. Chu ◽  
S.M. Huang ◽  
H.B. Zhu ◽  
X.B. Xu ◽  
Z. Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Thin Films ◽  
External Heating

scholarly journals Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties

2019 ◽  
Vol 9 (5) ◽  
pp. 1202-1207 ◽  
Author(s):  
Jan Haschke ◽  
Raphael Lemerle ◽  
Brahim Aissa ◽  
Amir A. Abdallah ◽  
Maulid M. Kivambe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells

scholarly journals Thermal Transport Evolution Due to Nanostructural Transformations in Ga-Doped Indium-Tin-Oxide Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1126
Author(s):  
Alexandr Cocemasov ◽  
Vladimir Brinzari ◽  
Do-Gyeom Jeong ◽  
Ghenadii Korotcenkov ◽  
Sergiu Vatavu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Spray Pyrolysis ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thermal Transport ◽  
Density Functional ◽  
Group Symmetry ◽  
Nanocrystalline Phase ◽  
Ga Doping

We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0–30 at. %) deposited by spray pyrolysis technique. X-ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15–20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0–0.5 Wm−1 K−1 depending on Ga doping level. It was found from a comparison between density functional theory calculations and XRD data that Ga atoms substitute In atoms in the ITO nanocrystals retaining Ia-3 space group symmetry. The calculated phonon dispersion relations revealed that Ga doping leads to the appearance of hybridized metal atom vibrations with avoided-crossing behavior. These hybridized vibrations possess shortened mean free paths and are the main reason behind the thermal conductivity drop in nanocrystalline phase. An evolution from propagative to diffusive phonon thermal transport in ITO:Ga with 15–20 at. % of Ga was established. The suppressed thermal conductivity of ITO:Ga thin films deposited by spray pyrolysis may be crucial for their thermoelectric applications.

scholarly journals Effects of Water Concentration on the Structural and Optical Properties of FTO Thin Films Grown by Home Made SISOM’S SPEED Technique

2017 ◽  
Author(s):  
Ayodeji Oladiran Awodugba ◽  
Gbadebo Taofeek Yusuf
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Quartz Substrate ◽  
Dye Sensitized Solar Cells ◽  
Water Concentration ◽  
Precursor Solution ◽  
Optical Transmittance ◽  
Deposition Condition ◽  
Vis Spectroscopy

Influence of water concentration on the properties of fluorine-doped tin oxide (FTO) thin films was systematically studied in this work. Home made SISOM’s SPEED techniques and its chemical formulation was employed to grow the FTO on quartz substrate. Water concentration in the precursor solution was varied from 0, 0.5, 1.0 and 1.5 mol %. The structural, optical, and electrical properties of the films were studied under these deposition conditions. The results show that the properties of the films varied significantly with water concentration. Scanning electron microscopy (SEM) revealed FTO films whose grain size and uniformity increases significantly with increase in water concentration. The structure of the films was measured by X-ray diffraction (XRD) measurement. It shows polycrystalline films with (110), (101), (200), (211) and (220) orientation; the strength increases as water concentration increases. The optical transmission was determined by UV-Vis spectroscopy at 380–780 nm UV-VIS regions. The optical transmittance varies with water concentration with an average of 84%. The electrical property, measured by Hall Effect revealed n-type semiconductor. The films have the following properties: resistivity, 15 × 10-4Ω cm; carrier concentration, 18.7 × 1019 cm-3 and mobility of 21.86 cm2 V-1 s-1. The average figure of merit, φ of the FTO film is 1.25. Optimum deposition condition was established after series of experiments and was found to be 1.5% water concentration at 460oC substrate temperature. The FTO films deposited in this work could be a promising replacement to indium tin oxide (ITO) especially in dye-sensitized solar cells.

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