scholarly journals Aging Processes in Implanted Fluorine Ions and Laser Irradiated Films of LaGa:YIG

2019 ◽  
Vol 20 (2) ◽  
pp. 202-207
Author(s):  
B.K. Ostafiychuk ◽  
I.P. Yaremiy ◽  
S.I. Yaremiy ◽  
M.M. Povkh ◽  
L.S. Yablon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Laser Irradiation ◽  
Crystalline Structure ◽  
Laser Annealing ◽  
Natural Aging ◽  
Surface Layers ◽  
Near Surface ◽  
Maximum Deformation ◽  
Garnet Films ◽  
Fluorine Ions

Based on the results of X-ray structural analysis, changes in the crystalline structure during natural aging and laser annealing, which occurred in near-surface layers of epitaxial films of LaGa-substituted Iron-Yttrium Garnet, implanted by F+ ions, were studied. The processes that occur during the ion implantation by F+ in ferrite-garnet films, and the processes that accompany the low-temperature aging of ion-implanted films are considered. From the experimental rocking curves, obtained immediately after ion implantation, after the laser irradiation and after several years, strain profiles were determined. Two stages in the changes of the crystalline structure of the nearsurface disturbed layer over time are revealed. During the first of them, the maximum deformation in the ionimplanted layer increased slightly, and on the second it decreased. It was established that the results of laser annealing and natural aging of near-surface layers implanted by F+ ions and laser irradiated LaGa:YIG films  depend on the direction from which laser irradiation occurred. However, the result of their total exposure does not depend on the side of laser irradiation.

scholarly journals Aging Processes in Films of Iron-Yttrium Garnet Implanted by Boron Ions

2019 ◽  
Vol 20 (1) ◽  
pp. 56-62 ◽  
Author(s):  
I. P. Yaremiy ◽  
M.M. Povkh ◽  
V.O. Kotsyubynsky ◽  
V.D. Fedoriv ◽  
S.I. Yaremiy ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Constant Thickness ◽  
Surface Layers ◽  
Maximum Deformation ◽  
Garnet Films ◽  
Low Temperature Aging ◽  
Disturbed Layer ◽  
Boron Ions ◽  
Iron Yttrium Garnet ◽  
Temperature Aging

Based on the results of X-ray structural analysis, changes in the crystalline structure that occurred during 15 years in surface layers of epitaxial films of iron-yttrium garnet implanted by B+ ions were studied. The processes that occur during the B+ ion implantation of in ferrite-garnet films, and the processes that accompany the low-temperature aging of ion-implanted films are considered. Strain profiles were determined from the experimental rocking curves, obtained immediately after ion implantation and after 15 years. It was found that the value of relative maximum deformation of surface layers decreases at constant thickness of the disturbed layer.

scholarly journals Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing

2002 ◽  
Vol 102 (2) ◽  
pp. 259-264 ◽  
Author(s):  
D. Klinger ◽  
S. Kret ◽  
J. Auleytner ◽  
D. Żymierska
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Surface Layers ◽  
Near Surface

The Effect of As+ Ion Implantation and Annealing on the Electrical Properties of Near-Surface Layers in Graded-Gap n-Hg0.78Cd0.22Te Films

2021 ◽  
Vol 47 (2) ◽  
pp. 189-192
Author(s):  
A. V. Voitsekhovskii ◽  
S. N. Nesmelov ◽  
S. M. Dzyadukh ◽  
V. S. Varavin ◽  
S. A. Dvoretskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Surface Layers ◽  
Near Surface

scholarly journals Structural Evolution of Near-Surface Layers in NiTi Alloy Caused by an Ion Implantation

2011 ◽  
Vol 120 (1) ◽  
pp. 75-78 ◽  
Author(s):  
Z. Swiatek ◽  
M. Michalec ◽  
N. Levintant-Zayonts ◽  
J. Bonarski ◽  
A. Budziak ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Niti Alloy ◽  
Structural Evolution ◽  
Surface Layers ◽  
Near Surface

Dislocation structure in near-surface layers of pure metals formed by ion implantation

1989 ◽  
Vol 115 ◽  
pp. 337-341 ◽  
Author(s):  
A.N Didenko ◽  
A.I Rjabchikov ◽  
G.P Isaev ◽  
N.M Arzubov ◽  
Yu.P Sharkeev ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dislocation Structure ◽  
Surface Layers ◽  
Near Surface ◽  
Pure Metals

scholarly journals Creation of wear-resistant near-surface-layers with inhomogeneous structure on NiTi alloy by ion implantation technology

2010 ◽  
Vol 10 ◽  
pp. 69-76
Author(s):  
Z. Swiatek ◽  
N. Levintant-Zayonts ◽  
M. Michalec ◽  
T. Czeppe ◽  
M. Lipinski ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Niti Alloy ◽  
Inhomogeneous Structure ◽  
Surface Layers ◽  
Near Surface ◽  
Wear Resistant

Study of near-surface layers modified by ion implantation in Si wafers by grazing incidence X-ray reflectometry

1999 ◽  
Vol 286 (1-2) ◽  
pp. 337-342 ◽  
Author(s):  
J.B Pełka ◽  
J Auleytner ◽  
J Domagała ◽  
Z Werner ◽  
M Janik-Czachor
Keyword(s):  
Ion Implantation ◽  
Grazing Incidence ◽  
Surface Layers ◽  
Near Surface ◽  
X Ray

Impurity Activation in N+ Ion-Implanted 6H-SiC with Pulsed Laser Annealing Method

2000 ◽  
Vol 640 ◽  
Author(s):  
O. Eryu ◽  
K. Aoyama ◽  
K. Abe ◽  
K. Nakashima
Keyword(s):  
Contact Resistance ◽  
Laser Irradiation ◽  
Carrier Density ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Surface Region ◽  
Near Surface ◽  
Pulsed Laser Annealing ◽  
Annealing Method ◽  
Ion Implanted

ABSTRACTWe have succeeded in pulsed laser annealing of N+ ion-implanted n-type 6H-SiC for increasing the carrier density near surface in order to decrease contact resistance, which induces little redistribution of implanted impurities after laser irradiation. By repeated laser irradiation at low energy density, the ion–implanted impurities were electrically activated without melting the surface region. SiC substrates with impurity concentration of 2×1018 /cm3 were implanted with 30 keV N+ ions with dose of 4.7×1013/cm2. After pulsed laser annealing, a contact resistance was measured to be 5.7×10−5 Ωcm2 using Al electrode on the N+ -implanted layer.

Double-Crystal X-ray Diffraction Studies of Si ion-Implanted and Pulsed Laser-Annealed GaAs

1990 ◽  
Vol 34 ◽  
pp. 531-541
Author(s):  
P. M. Adams ◽  
J. F. Knudsen ◽  
R. C. Bowman
Keyword(s):  
Ion Implantation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Thermal Treatments ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Microelectronic Devices

Ion-implantation has many applications in the fabrication and processing of microelectronic devices from semiconductors, but thermal treatments are required to remove defects produced by the implant and to electrically activate dopants. Recently, pulsed laser annealing has been used to activate surface layers of GaAs that have been heavily doped with 28Si+ by ion implantation, and carrier concentrations of > 1 x 1019 cm-3 have been achieved (Ref. 1). Double-crystal x-ray diffraction techniques are very sensitive to strains and defects in single crystals and provide a means for characterizing and quantifying the damage produced by ion-implantation and the subsequent relief of damage by pulsed laser annealing.

Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Goetzlich ◽  
P.H. Tsien ◽  
H. Ryssel
Keyword(s):  
Ion Implantation ◽  
Time Dependence ◽  
Carrier Concentration ◽  
Laser Irradiation ◽  
Solid Solutions ◽  
Laser Annealing ◽  
High Dose ◽  
Cw Laser ◽  
Different Temperatures ◽  
Removal Technique

ABSTRACTMetastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

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