fluorine ions
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Author(s):  
Andrei Ivanovich Titov ◽  
Konstantin Karabeshkin ◽  
Andrei Struchkov ◽  
Platon Karaseov ◽  
Alexander Azarov

Abstract Realization of radiation-hard electronic devices able to work in harsh environments requires deep understanding the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus, and argon ions leads to a decrease of the damage.


2022 ◽  
Author(s):  
Hyojung Kim ◽  
Jongwoo Park ◽  
Taeyoung Khim ◽  
Hyuncheol Hwang ◽  
Jungmin Park ◽  
...  

Abstract Flexible devices fabricated with polyimide (PI) substrate are crucial for foldable, rollable, or stretchable products in various applications. However, inherent technical challenges remain in mobile charge induced device instabilities and image retention, significantly hindering future technologies. We introduced a new barrier material, SiCOH, into the backplane of amorphous indium-gallium-zinc-oxide (a–IGZO) thin-film transistors (TFTs) that were then implemented into production-level flexible panels. We found that the SiCOH layer effectively compensates the surface charging induced by fluorine ions at the interface between the PI substrate and the barrier layer under bias stress, thereby preventing abnormal positive Vth shifts and image disturbance. The a–IGZO TFTs, metal-insulator-metal (MIM), and metal-insulator-semiconductor (MIS) capacitors with the SiCOH layer demonstrate reliable device performance, Vth shifts, and capacitance changes with an increase in the gate bias stress. A flexible device with SiCOH enables the suppression of abnormal Vth shifts associated with PI and plays a vital role in the degree of image sticking phenomenon. This work provides new inspirations to creating much improved process integrity and paves the way for expediting versatile form-factors.


Polymers ◽  
2021 ◽  
Vol 13 (19) ◽  
pp. 3421
Author(s):  
Alexander V. Dolganov ◽  
Vadim D. Revin ◽  
Sergey G. Kostryukov ◽  
Viktor V. Revin ◽  
Guang Yang

The described research examined the adsorption of fluoride ions from solution immobilized onto an aluminum oxide-coated bacterial cellulose-based composite material in which aluminum oxide had been deposited using ALD technology. The kinetic regularities of the adsorption of fluoride ions from the solution as well as the mechanism of the processes were analyzed. The established equations show that the dynamics of adsorption correspond to first-order kinetics. Based on the Langmuir adsorption isotherms, we defined the adsorption equilibrium constants, parameter maximum adsorption, and change in Gibbs free energy. It is shown that, with increasing temperature, an increase in the reaction rate is constant, both forward and reverse. This testifies to the activated character of adsorption of the first fluoride on the surface of the sorbent based on bacterial cellulose modified with an alumina nanolayer. The activation energy of the desorption process is higher than the activation energy of the adsorption process, which characterizes the adsorption as ionic. The negative value of entropy indicates that in the course of sorption, an adsorption complex “aluminum-fluorine” is formed, where the system is more ordered than the initial system in which fluorine ions are in solution. The limiting stages of the process are revealed. The high sorption capacity of the resulting bacterial cellulose-based composite material obtained by means of biosynthesis through cultivation of the bacterium Komagataeibacter sucrofermentans B-11267 was demonstrated.


2021 ◽  
Vol 14 (06) ◽  
pp. 2151039
Author(s):  
Meng Zhang ◽  
Ting Song ◽  
Hancheng Zhu ◽  
Xinyang Zhang

Study of the defect states in the luminescent host materials has always been a significant point in improving the light emitting devices performances. To afford candidate luminescence host materials, defect states in Sr3MgSi2O[Formula: see text]F[Formula: see text] induced by substitution of fluorine ions (F[Formula: see text] substituting for oxygen ions (O[Formula: see text] have been studied through first principles calculation and the related results are presented in this work. First, chemical formulas have been confirmed to be Sr3MgSi2O[Formula: see text]F[Formula: see text] through calculations of the possible crystal structures with increasing F[Formula: see text] substituting for O[Formula: see text] concentrations while band gap values decrease from 5.889 eV to 5.328 eV. When the fluorine ion substituting concentration [Formula: see text] reached 0.5, a new defect state near 3.002 eV in the band gap appeared and it can be concluded that the defect state originates from the two fluorine ions bonding to the same Si–O–F2 group. In addition, there arose a new absorption band in the visible region and it can also be attributed to the introduced color [Formula: see text] center in Sr3MgSi2O[Formula: see text]F. The aforementioned results show that tiny doping amounts of fluorine ions could make Sr3MgSi2O[Formula: see text]F[Formula: see text] suitable for luminescence host materials.


2021 ◽  
Vol 13 (3) ◽  
pp. 1554
Author(s):  
Tadas Dambrauskas ◽  
Kestutis Baltakys ◽  
Agne Grineviciene ◽  
Valdas Rudelis

In this work, the influence of various hydroxide and salt additives on the removal of F− ions from silica gel waste, which is obtained during the production of AlF3, was examined. The leaching of the mentioned ions from silica gel waste to the liquid medium was achieved by the application of different techniques: (1) leaching under static conditions; (2) leaching under dynamic conditions by the use of continuous liquid medium flow; and (3) leaching in cycles under dynamic conditions. It was determined that the efficiency of the fluoride removal from this waste depends on the w/s ratio, the leaching conditions, and the additives used. It was proven that it is possible to reduce the concentration of fluorine ions from 10% to <5% by changing the treatment conditions and by adding alkaline compounds. The silica gel obtained after the leaching is a promising silicon dioxide source.


Nanomaterials ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 2116
Author(s):  
Soo Cheol Kang ◽  
Hyun-Wook Jung ◽  
Sung-Jae Chang ◽  
Seung Mo Kim ◽  
Sang Kyung Lee ◽  
...  

An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.


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